IPP100N12S305AKSA2 vs IPP100N12S305AKSA1 对比

详细并排对比 IPP100N12S305AKSA2 出自 Infineon 和 IPP100N12S305AKSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPP100N12S305AKSA1 IPP100N12S305AKSA1 - 120V 100A OptiMOS N-Channel MOSFET | Infineon

IPP100N12S305AKSA1 - 120V 100A OptiMOS N-Channel MOSFET | Infineon

IPP100N12S305AKSA1 ✓ 量产中

规格对比

参数 IPP100N12S305AKSA2 IPP100N12S305AKSA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $3.78 $2.05
Manufacturer Infineon Technologies —
Product Family OptiMOS 5 —
FET Type N-Channel —
Drain-Source Voltage (VDS) 120 V 120 V
Continuous Drain Current (ID, TC=25C) 100 A —
Continuous Drain Current (ID, TC=100C) [DATA_NEEDED: ID at TC=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Maximum Power Dissipation (PD, TC=25C) 300 W —
On-State Resistance R_DS(on) max @ VGS=10V [DATA_NEEDED: R_DS(on) max] —
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th)] —
Gate Charge Qg typ @ VGS=10V [DATA_NEEDED: total gate charge] —
Total Gate Charge Qg [DATA_NEEDED: Qg value] —
Reverse Recovery Charge Qrr [DATA_NEEDED: Qrr value] —
工作温度范围 -55C to +175C (TJ) —
封装 PG-TO220-3-1 (Through Hole) TO-220 (PG-TO220-3-1)
安装类型 Through Hole Through Hole
引脚数量 3 (Gate, Drain, Source) 3
RoHS 状态 Compliant —
MSL 等级 N/A (Through Hole) —
Avalanche Energy Rated Yes (single-pulse) —
晶体管类型 — N-Channel MOSFET
Technology — OptiMOS trench
Continuous Drain Current (ID) at Tc — 100 A
脉冲漏极电流 — [DATA_NEEDED: pulsed ID value]
Maximum Power Dissipation (Ptot) at Tc — 300 W
Gate-Source Voltage (VGS) max — ±20 V
On-Resistance RDS(on) — [DATA_NEEDED: RDS(on) at VGS=10V]
Avalanche Energy, Single Pulse — [DATA_NEEDED: EAS]
工作结温 — -55 °C to +175 °C
MSL Moisture Sensitivity Level — 1 (260 °C peak reflow)
Automotive Qualification — AEC-Q101 qualified
Avalanche Tested — 100% tested
RoHS Compliance — Compliant (Green product)

数据手册与资源

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