IPP320N20N3GXKSA1 vs IPB35N10S3L26ATMA1 对比
详细并排对比 IPP320N20N3GXKSA1 出自 Infineon 和 IPB35N10S3L26ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPP320N20N3GXKSA1 | IPB35N10S3L26ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.36 | $1.15 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 3 | OptiMOS-T |
| Technology | N-Channel Trench MOSFET | — |
| Drain-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) at TC=25°C | 34 A | — |
| On-State Resistance RDS(on) max at VGS=10V | 32 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 4 V | — |
| Total Power Dissipation PD at TC=25°C | 136 W | — |
| 封装 | TO-220-3 (PG-TO220-3) through-hole | — |
| 安装类型 | Through Hole | Surface Mount |
| 引脚数 | 3 (3 + Tab) | — |
| 工作温度范围 | -55°C to +175°C | — |
| Channel Type | N-Channel | N-Channel |
| Element Configuration | Single | — |
| RoHS 状态 | Compliant | [DATA_NEEDED: RoHS status] |
| Lead-Free | Yes | — |
| MSL 等级 | Not applicable (through-hole) | — |
| Maximum Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC | — | 35 A |
| Power Dissipation (PD) at TC | — | 71 W |
| Package Type | — | PG-TO263-3 (D2PAK-2) |
| 引脚数量 | — | 3 (Gate, Drain, Source) |
| Channel Mode | — | Enhancement |
| RDS(on) (typical per Infineon product page) | — | 26.3 mΩ |
| Typical Gate Charge Qg @ Vgs | — | 80 nC |
| Maximum Drain-Source Resistance Rds | — | 1.7 mΩ (per RS Components listing) |
| Minimum Operating Temperature | — | -55 C |
| Maximum Power Dissipation Pd | — | 81 W (per RS Components listing) |
| AEC-Q101 Qualification | — | [DATA_NEEDED: AEC-Q101 qualification status] |