IPT012N08NF2SATMA1 vs IPB60R040CFD7ATMA1 对比
详细并排对比 IPT012N08NF2SATMA1 出自 Infineon 和 IPB60R040CFD7ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPT012N08NF2SATMA1 | IPB60R040CFD7ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.74 | $5.19 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPT012N08NF2SATMA1 | — |
| Product Family | StrongIRFET™ | CoolMOS CFD7 |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 80 V | — |
| Continuous Drain Current (ID) at Ta | 39 A | — |
| Pulsed Drain Current (IDM) at Tc | 351 A | — |
| On-Resistance RDS(on) Typ @ VGS=10V | 1.2 mΩ | — |
| Gate Threshold Voltage (VGS(th)) Max | 3.8 V | — |
| Power Dissipation (PD) at Ta | 3.8 W | — |
| Power Dissipation (PD) at Tc | 300 W | — |
| 工作结温 | -55 °C to +175 °C | — |
| 封装 | PG-HSOF-8-10 (HSOF) | PG-TO263-3-2 (D2PAK) |
| 安装类型 | Surface Mount | Surface Mount |
| Pin Count (incl. tab) | 9 pins (8+tab) | — |
| Technology | Trench MOSFET (OptiMOS-derived) | Superjunction (SJ) N-Channel MOSFET |
| RoHS 状态 | Compliant | Compliant |
| Packing | Tape & Reel (T/R) | — |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 50 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 40 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 4 V |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg] |
| 功耗（TC=25°C） | — | 227 W |
| 工作温度范围 | — | -55°C to +150°C |
| Integrated Body Diode | — | Yes - ultra-fast CoolMOS CFD7 diode |
| MSL 等级 | — | 1 |
| Lead-Free | — | Yes |
| Target Applications | — | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) |