IPT012N08NF2SATMA1 vs IPB60R040CFD7ATMA1 Comparison
Detailed side-by-side comparison of IPT012N08NF2SATMA1 by Infineon and IPB60R040CFD7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPT012N08NF2SATMA1
IPT012N08NF2SATMA1 - 80V, 1.2mΩ N-Channel MOSFET | Infineon
IPT012N08NF2SATMA1 ✓ ActiveInfineon
IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon
IPB60R040CFD7ATMA1 ✓ ActiveSpecification Comparison
| Parameter | IPT012N08NF2SATMA1 | IPB60R040CFD7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.74 | $5.19 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPT012N08NF2SATMA1 | — |
| Product Family | StrongIRFET™ | CoolMOS CFD7 |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 80 V | — |
| Continuous Drain Current (ID) at Ta | 39 A | — |
| Pulsed Drain Current (IDM) at Tc | 351 A | — |
| On-Resistance RDS(on) Typ @ VGS=10V | 1.2 mΩ | — |
| Gate Threshold Voltage (VGS(th)) Max | 3.8 V | — |
| Power Dissipation (PD) at Ta | 3.8 W | — |
| Power Dissipation (PD) at Tc | 300 W | — |
| Operating Junction Temperature | -55 °C to +175 °C | — |
| Package | PG-HSOF-8-10 (HSOF) | PG-TO263-3-2 (D2PAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count (incl. tab) | 9 pins (8+tab) | — |
| Technology | Trench MOSFET (OptiMOS-derived) | Superjunction (SJ) N-Channel MOSFET |
| RoHS Status | Compliant | Compliant |
| Packing | Tape & Reel (T/R) | — |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 50 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 40 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 4 V |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg] |
| Power Dissipation (Tc=25°C) | — | 227 W |
| Operating Temperature Range | — | -55°C to +150°C |
| Integrated Body Diode | — | Yes - ultra-fast CoolMOS CFD7 diode |
| MSL Level | — | 1 |
| Lead-Free | — | Yes |
| Target Applications | — | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) |