IPT022N10NF2SATMA1 vs BSC076N04NDATMA1 对比
详细并排对比 IPT022N10NF2SATMA1 出自 Infineon 和 BSC076N04NDATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPT022N10NF2SATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.99 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | StrongIRFET 2 | — |
| FET Type | N-Channel | 2x N-Channel MOSFET array |
| Drain-Source Voltage (V(BR)DSS) | 100 V | — |
| Continuous Drain Current (Id) at Ta | 29 A | — |
| Continuous Drain Current (Id) at Tc | 236 A | — |
| Typical RDS(on) at VGS=10V | 2.2 mΩ | — |
| Power Dissipation at Ta | 3.8 W | — |
| Power Dissipation at Tc | 250 W | — |
| 封装 | PG-HSOF-8-10 (8 leads + tab) | — |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | Trench MOSFET | Trench MOSFET (OptiMOS 3) |
| 工作温度范围 | -55C to +175C | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | 4 V (max, typical) |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | — |
| RoHS 状态 | Compliant | — |
| Series | — | OptiMOS 3 |
| Configuration | — | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | — | 40 V |
| Continuous Drain Current (ID) | — | 20 A (Tc) |
| On-Resistance RDS(on) max | — | 7.6 mOhm |
| Power Dissipation (Ta) | — | 2.3 W |
| Power Dissipation (Tc) | — | 65 W |
| Qgd/Qgs Ratio | — | < 0.8 (high shot-through immunity) |
| 工作结温 | — | -55 C to +175 C |
| 封装 / 外壳 | — | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | — | Compliant (Pb-free plating) |