IPW60R037P7XKSA1 vs IPW60R190C6FKSA1 对比
详细并排对比 IPW60R037P7XKSA1 出自 Infineon 和 IPW60R190C6FKSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPW60R037P7XKSA1 | IPW60R190C6FKSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.55 | $2.05 |
| Manufacturer | Infineon Technologies | — |
| Series | CoolMOS™ P7 | — |
| 晶体管类型 | N-Channel MOSFET (Superjunction) | — |
| Drain-Source Voltage (V_DSS) | 600 V | — |
| Continuous Drain Current (I_D, Tc=25 °C) | 76 A | — |
| On-Resistance (R_DS(on), max, V_GS=10 V) | 37 mΩ | — |
| Power Dissipation (P_D, Tc=25 °C) | 255 W | — |
| Gate Threshold Voltage (V_GS(th), typ) | 3.5 V | — |
| 封装 | PG-TO247-3 (TO-247-3, through-hole) | TO-247-3 (PG-TO247-3-1) |
| 安装类型 | Through Hole | Through-Hole |
| 工作结温 | -55 °C to +150 °C | -55 °C to +150 °C |
| Technology | CoolMOS Superjunction (SJ) | CoolMOS™ C6 (Superjunction N-channel) |
| Orderable Part Number Suffix | XKSA1 (tube packaging, industrial) | — |
| RoHS 状态 | Compliant | Compliant |
| Avalanche Rated | Yes | — |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 20.2 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on), max @ VGS=10V) | — | 190 mΩ |
| Gate Threshold Voltage (VGS(th), typ) | — | [DATA_NEEDED: VGS(th) typ] |
| Total Gate Charge (Qg, typ @ VDS=480V) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD, Tc=25°C) | — | 151 W |
| Thermal Resistance, Junction-to-Case (RθJC) | — | 0.83 K/W |
| 引脚数量 | — | 3 (+ tab) |
| MSL 等级 | — | N/A (through-hole) |