IQD005N04NM6CGATMA1 vs ISC046N13NM6ATMA1 对比
详细并排对比 IQD005N04NM6CGATMA1 出自 Infineon 和 ISC046N13NM6ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IQD005N04NM6CGATMA1 | ISC046N13NM6ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.62 | $1.08 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 6 (trench FET) | OptiMOS 6 trench MOSFET |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Gate-to-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| RDS(on) Typical | 0.5 mΩ | — |
| Continuous Drain Current (ID) at Ta | 58 A | — |
| Continuous Drain Current (ID) at Tc | 610 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed rating] | — |
| Power Dissipation at Ta | 3 W | — |
| Power Dissipation at Tc | 333 W | — |
| 工作温度范围 | -55 °C to +150 °C (TJ) | -55 C to +175 C |
| 封装 | PG-TTFN-9-U02 (Source-Down 5x6 mm²) | — |
| 安装类型 | Surface Mount | Surface Mount |
| 引脚数量 | 9 | — |
| MSL 等级 | [DATA_NEEDED: MSL rating] | — |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Source Configuration | Source-Down (bottom-side source for PCB heatsinking) | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 6 |
| 晶体管类型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 135 V |
| Continuous Drain Current (ID) at TA | — | 17 A |
| Continuous Drain Current (ID) at TC | — | 142 A |
| Power Dissipation (PD) at TA | — | 3 W |
| Power Dissipation (PD) at TC | — | 211 W |
| 封装 / 外壳 | — | PG-TDSON-8 |
| Gate Drive (recommended) | — | 10 V (typical) |
| Packaging | — | Tape & Reel |