IQD005N04NM6CGATMA1 vs ISC046N13NM6ATMA1 Comparison
Detailed side-by-side comparison of IQD005N04NM6CGATMA1 by Infineon and ISC046N13NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IQD005N04NM6CGATMA1 | ISC046N13NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| FET Type | N-Channel | — |
| Technology | OptiMOS 6 (trench FET) | OptiMOS 6 trench MOSFET |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Gate-to-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| RDS(on) Typical | 0.5 mΩ | — |
| Continuous Drain Current (ID) at Ta | 58 A | — |
| Continuous Drain Current (ID) at Tc | 610 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed rating] | — |
| Power Dissipation at Ta | 3 W | — |
| Power Dissipation at Tc | 333 W | — |
| Operating Temperature Range | -55 °C to +150 °C (TJ) | -55 C to +175 C |
| Package | PG-TTFN-9-U02 (Source-Down 5x6 mm²) | — |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 9 | — |
| MSL Level | [DATA_NEEDED: MSL rating] | — |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Source Configuration | Source-Down (bottom-side source for PCB heatsinking) | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 6 |
| Transistor Type | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 135 V |
| Continuous Drain Current (ID) at TA | — | 17 A |
| Continuous Drain Current (ID) at TC | — | 142 A |
| Power Dissipation (PD) at TA | — | 3 W |
| Power Dissipation (PD) at TC | — | 211 W |
| Package / Case | — | PG-TDSON-8 |
| Gate Drive (recommended) | — | 10 V (typical) |
| Packaging | — | Tape & Reel |