IQD016N08NM5ATMA1 vs IQE050N08NM5CGATMA1 对比
详细并排对比 IQD016N08NM5ATMA1 出自 Infineon 和 IQE050N08NM5CGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IQD016N08NM5ATMA1 | IQE050N08NM5CGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.68 | $1.75 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | 80 V |
| Continuous Drain Current (Ta) | 31 A | 16 A |
| Continuous Drain Current (Tc) | 323 A | 101 A |
| On-Resistance RDS(on) typical | 1.6 mΩ | — |
| Power Dissipation (Ta) | 3 W | 2.5 W |
| Power Dissipation (Tc) | 333 W | 100 W |
| 封装 | PG-TSON-8-9 (PQFN 5x6) | PG-TTFN-9-1 (Surface Mount) |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 Power-MOSFET | OptiMOS 5 (Source-Down) |
| 工作温度范围 | -55C to +150C (junction, standard MOSFET rating) | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg typical] | — |
| RoHS 状态 | Compliant | Compliant |
| FET Type | — | N-Channel |
| On-Resistance RDS(on) Max | — | 5.0 mΩ |
| Gate Threshold Vgs(th) Typ | — | [DATA_NEEDED: Vgs(th) typical value] |
| 工作温度 | — | -55°C to +175°C (TJ max) |
| Total Gate Charge Qg Typ | — | [DATA_NEEDED: total gate charge Qg typical] |
| MSL 等级 | — | [DATA_NEEDED: MSL rating] |