IQD016N08NM5ATMA1 vs IQE050N08NM5CGATMA1 Comparison
Detailed side-by-side comparison of IQD016N08NM5ATMA1 by Infineon and IQE050N08NM5CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQD016N08NM5ATMA1
IQD016N08NM5ATMA1 - 80V 1.6mΞ© OptiMOS 5 N-MOSFET | Infineon
IQD016N08NM5ATMA1 β ActiveInfineon
IQE050N08NM5CGATMA1
IQE050N08NM5CGATMA1 - 80V N-Ch MOSFET 5mΞ© Source-Down | Infineon
IQE050N08NM5CGATMA1 β ActiveSpecification Comparison
| Parameter | IQD016N08NM5ATMA1 | IQE050N08NM5CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.68 | $1.75 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 5 | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 80 V | 80 V |
| Continuous Drain Current (Ta) | 31 A | 16 A |
| Continuous Drain Current (Tc) | 323 A | 101 A |
| On-Resistance RDS(on) typical | 1.6 mΞ© | β |
| Power Dissipation (Ta) | 3 W | 2.5 W |
| Power Dissipation (Tc) | 333 W | 100 W |
| Package | PG-TSON-8-9 (PQFN 5x6) | PG-TTFN-9-1 (Surface Mount) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 Power-MOSFET | OptiMOS 5 (Source-Down) |
| Operating Temperature Range | -55C to +150C (junction, standard MOSFET rating) | β |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical] | β |
| Total Gate Charge Qg | [DATA_NEEDED: Qg typical] | β |
| RoHS Status | Compliant | Compliant |
| FET Type | β | N-Channel |
| On-Resistance RDS(on) Max | β | 5.0 mΞ© |
| Gate Threshold Vgs(th) Typ | β | [DATA_NEEDED: Vgs(th) typical value] |
| Operating Temperature | β | -55Β°C to +175Β°C (TJ max) |
| Total Gate Charge Qg Typ | β | [DATA_NEEDED: total gate charge Qg typical] |
| MSL Level | β | [DATA_NEEDED: MSL rating] |