IQDH88N06LM5CGSCATMA1 vs IQDH88N06LM5SCATMA1 对比
详细并排对比 IQDH88N06LM5CGSCATMA1 出自 Infineon 和 IQDH88N06LM5SCATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IQDH88N06LM5SCATMA1 - 60V 447A 0.7mOhm OptiMOS 5 N-MOSFET | Infineon
IQDH88N06LM5SCATMA1 ✓ 量产中规格对比
| 参数 | IQDH88N06LM5CGSCATMA1 | IQDH88N06LM5SCATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.31 | $2.55 |
| 晶体管类型 | N-Channel MOSFET | — |
| Technology | OptiMOS 5 (trench) | N-Channel MOSFET (OptiMOS 5) |
| Drain-Source Voltage (V(BR)DSS) | 60 V | — |
| Continuous Drain Current (Ta=25°C) | 42 A | — |
| 连续漏极电流（TC=25°C） | 447 A | — |
| On-Resistance RDS(on) typical @ VGS=10V | 0.86 mΩ | — |
| Power Dissipation (Ta=25°C) | 3 W | — |
| 功耗（TC=25°C） | 333 W | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate Charge Qg typical | [DATA_NEEDED: Qg typical nC] | — |
| 工作温度范围 | -55°C to +175°C (TJ) | -55 C to +175 C |
| 封装 | PG-WHTFN-9-U02 (PQFN 5x6) | PG-WHSON-8-U02 (source-down, dual-side cooling) |
| 安装类型 | Surface Mount | Surface Mount |
| 引脚数量 | 9 (with exposed pad) | — |
| Cooling | Dual-side cooling capable | — |
| MSL 等级 | 1 (per JEDEC J-STD-020) | — |
| RoHS 状态 | Compliant | Compliant |
| Polarity | N-Channel | — |
| Configuration | Single | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IQDH88N06LM5SCATMA1 |
| Series | — | OptiMOS 5 |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, Ta) | — | 42 A |
| Continuous Drain Current (ID, Tc) | — | 447 A |
| On-State Resistance (RDS(on)) | — | 0.7 mOhm at VGS = 10 V |
| Gate-Source Voltage (VGS) | — | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) | — | 1.7 V |
| Total Gate Charge (Qg) | — | 76 nC |
| Input Capacitance (Ciss) | — | 11 nF |
| Output Capacitance (Coss) | — | 2 nF |
| Reverse Transfer Capacitance (Crss) | — | 95 pF |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 333 W |