IQDH88N06LM5CGSCATMA1 vs IQDH88N06LM5SCATMA1 Comparison
Detailed side-by-side comparison of IQDH88N06LM5CGSCATMA1 by Infineon and IQDH88N06LM5SCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQDH88N06LM5CGSCATMA1
IQDH88N06LM5CGSCATMA1 - 60V N-Ch MOSFET 0.86mΞ© | Infineon
IQDH88N06LM5CGSCATMA1 β ActiveInfineon
IQDH88N06LM5SCATMA1
IQDH88N06LM5SCATMA1 - 60V 447A 0.7mOhm OptiMOS 5 N-MOSFET | Infineon
IQDH88N06LM5SCATMA1 β ActiveSpecification Comparison
| Parameter | IQDH88N06LM5CGSCATMA1 | IQDH88N06LM5SCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.31 | $2.55 |
| Transistor Type | N-Channel MOSFET | β |
| Technology | OptiMOS 5 (trench) | N-Channel MOSFET (OptiMOS 5) |
| Drain-Source Voltage (V(BR)DSS) | 60 V | β |
| Continuous Drain Current (Ta=25Β°C) | 42 A | β |
| Continuous Drain Current (Tc=25Β°C) | 447 A | β |
| On-Resistance RDS(on) typical @ VGS=10V | 0.86 mΞ© | β |
| Power Dissipation (Ta=25Β°C) | 3 W | β |
| Power Dissipation (Tc=25Β°C) | 333 W | β |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical] | β |
| Gate Charge Qg typical | [DATA_NEEDED: Qg typical nC] | β |
| Operating Temperature Range | -55Β°C to +175Β°C (TJ) | -55 C to +175 C |
| Package | PG-WHTFN-9-U02 (PQFN 5x6) | PG-WHSON-8-U02 (source-down, dual-side cooling) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 9 (with exposed pad) | β |
| Cooling | Dual-side cooling capable | β |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| RoHS Status | Compliant | Compliant |
| Polarity | N-Channel | β |
| Configuration | Single | β |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | IQDH88N06LM5SCATMA1 |
| Series | β | OptiMOS 5 |
| Drain-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID, Ta) | β | 42 A |
| Continuous Drain Current (ID, Tc) | β | 447 A |
| On-State Resistance (RDS(on)) | β | 0.7 mOhm at VGS = 10 V |
| Gate-Source Voltage (VGS) | β | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) | β | 1.7 V |
| Total Gate Charge (Qg) | β | 76 nC |
| Input Capacitance (Ciss) | β | 11 nF |
| Output Capacitance (Coss) | β | 2 nF |
| Reverse Transfer Capacitance (Crss) | β | 95 pF |
| Power Dissipation (Ta) | β | 3 W |
| Power Dissipation (Tc) | β | 333 W |