IQDH88N06LM5CGSCATMA1 - 60V N-Ch MOSFET 0.86mΩ | Infineon
料号： IQDH88N06LM5CGSCATMA1 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $4.2 | $4.20 |
| 10 | $3.78 | $37.80 |
| 100 | $3.36 | $336.00 |
| 500 | $2.95 | $1,475.00 |
| 1,000 | $2.62 | $2,620.00 |
| 5,000 | $2.31 | $11,550.00 |
IQDH88N06LM5CGSCATMA1 概述
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used as the core switching element in DC-DC converters, motor drives, and synchronous rectification stages. N-channel MOSFETs (N-FETs) carry current via electrons, which have higher mobility than holes, giving them lower on-resistance per unit silicon area than equivalent P-channel parts. The IQDH88N06LM5 belongs to the discrete MOSFET family within discrete semiconductors, optimized for low-voltage, high-current SMPS applications.
Key features include a 60V drain-source breakdown voltage (V(BR)DSS), 0.86 mΩ typical RDS(on) at VGS=10V, logic-level compatible gate drive, and an integrated exposed drain pad for superior thermal performance. The PG-WHTFN-9-U02 package provides exceptionally low thermal resistance and supports dual-side cooling via the top-side metal, enabling higher continuous current in the same PCB footprint than traditional DFN parts.
The device leverages Infineon's latest trench MOSFET process technology, which achieves best-in-class figure-of-merit (FOM = RDS(on) × Qg) for switching loss reduction. The low gate charge and low output capacitance enable operation at high switching frequencies (>1 MHz) in point-of-load and telecom DC-DC converter stages, reducing magnetic component size and overall system cost.
Typical applications include synchronous rectification in 48V telecom and server DC-DC converters, hot-swap and OR-ing switches in high-performance computing, battery protection circuits in power tools and e-mobility, and motor drive half-bridges in industrial automation. The 60V rating provides ample margin above 48V nominal bus rails used in data centers.
When designing with this device, pay close attention to gate drive voltage - the maximum 0.86 mΩ RDS(on) is achieved at VGS=10V, while logic-level operation at 4.5V will see roughly 1.5-2x higher on-resistance. Use a dedicated gate driver IC for high-frequency switching to minimize transition losses.
This page synthesizes distributor stock levels, parametric cross-references, and practical PCB layout guidance not consolidated on any single distributor product page.
直接替换替代料： IQDH88N06LM5CGSCATMA1 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： IQDH88N06LM5CGSCATMA1 （相同外形与封装尺寸） ——差异在于 Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), Power Dissipation (Tc).
快速对比工具——选择替代料号进行并排对比：
IQDH88N06LM5CGSC
✅ 直接替换📋 参考替代料（不在目录中）
IQE065N10NM5CGSCATMA1
✅ 直接替换✓ 有现货
$1.28 / 个
查看数据手册 →IQE050N08NM5CGATMA1
✅ 直接替换✓ 有现货
$1.75 / 个
查看数据手册 →BSC0502NSIATMA1
✅ 直接替换✓ 有现货
$0.85 / 个
查看数据手册 →ISC151N08NM6ATMA1
✅ 直接替换✓ 有现货
$0.78 / 个
查看数据手册 →IQDH88N06LM5CGSCATMA1 最大额定值与电气特性
| 晶体管类型 | N-Channel MOSFET |
| Technology | OptiMOS 5 (trench) |
| Drain-Source Voltage (V(BR)DSS) | 60 V |
| Continuous Drain Current (Ta=25°C) | 42 A |
| 连续漏极电流（TC=25°C） | 447 A |
| On-Resistance RDS(on) typical @ VGS=10V | 0.86 mΩ |
| Power Dissipation (Ta=25°C) | 3 W |
| 功耗（TC=25°C） | 333 W |
| 工作温度范围 | -55°C to +175°C (TJ) |
| 封装 | PG-WHTFN-9-U02 (PQFN 5x6) |
| 安装类型 | Surface Mount |
| 引脚数量 | 9 (with exposed pad) |
| Cooling | Dual-side cooling capable |
| MSL 等级 | 1 (per JEDEC J-STD-020) |
| RoHS 状态 | Compliant |
| Polarity | N-Channel |
| Configuration | Single |
IQDH88N06LM5CGSCATMA1 引脚配置
| 引脚 1 | Source — Source connection (paralleled with pins 2-3, 7-9) |
| 引脚 2 | Source — Source connection (paralleled) |
| 引脚 3 | Source — Source connection (paralleled) |
| 引脚 4 | Gate — Gate drive input |
| 引脚 5 | Drain (Exposed Pad) — Drain connection via exposed thermal pad |
| 引脚 6 | Drain — Drain connection (paralleled with EP) |
| 引脚 7 | Source — Source connection (paralleled) |
| 引脚 8 | Source — Source connection (paralleled) |
| 引脚 9 | Source — Source connection (paralleled) |
安全工作区 (DC)
典型应用
IQDH88N06LM5CGSCATMA1 适用于 6 应用s: 48V Telecom Synchronous Rectification, Data Center Hot-Swap / OR-ing Switch, E-Mobility Battery Protection (48V Mild Hybrid), Industrial Motor Drive Half-Bridge, Power Tool Battery Pack Protection, Point-of-Load (POL) DC-DC Converter.
48V Telecom Synchronous Rectification
The IQDH88N06LM5CGSCATMA1 fits 48V telecom synchronous rectification stages thanks to its 60V breakdown voltage with comfortable headroom above 48V nominal and 0.86 mΩ typical RDS(on) at VGS=10V, which minimizes conduction loss in high-current secondary-side rectifiers. In a typical 48V-to-12V isolated bus converter, the IQDH88N06LM5CGSCATMA1 replaces Schottky diodes on the secondary side, reducing rectifier losses by 50-70% at full load and improving overall efficiency above 96%. The 5x6 PQFN footprint and dual-side cooling allow direct PCB mounting with both top-side heatsink and bottom-side copper pour, sustaining >30A continuous. Compared to a discrete diode rectifier, the synchronous MOSFET approach adds 3-5 percentage points to peak efficiency in 600W telecom bricks, while the 9-pin PG-WHTFN-9-U02 keeps the design within standard PCB density.
推荐
Data Center Hot-Swap / OR-ing Switch
The IQDH88N06LM5CGSCATMA1 is well-suited to high-current hot-swap and OR-ing switch roles in 48V server and data-center power distribution, where its 0.86 mΩ RDS(on) at VGS=10V minimizes steady-state power dissipation across the MOSFET in continuous current paths. In a 48V-12V bus OR-ing arrangement, two IQDH88N06LM5CGSCATMA1 devices share redundant feeds while reverse-current blocking protects upstream supplies during faults. The 60V V(BR)DSS) provides robust transient margin against 60V spike events during load steps on long bus cables. Compared to traditional 100V parts used in this role, the IQDH88N06LM5CGSCATMA1's lower RDS(on) cuts conduction loss roughly 30-40%, directly reducing board thermal load in dense 1U server designs where every watt of distribution loss counts toward overall PUE.
推荐
E-Mobility Battery Protection (48V Mild Hybrid)
In 48V mild-hybrid automotive battery management, the IQDH88N06LM5CGSCATMA1 serves as the main disconnect switch or precharge MOSFET where its 60V V(BR)DSS handles 48V nominal packs with margin for inductive transients, and its 0.86 mΩ RDS(on) at VGS=10V limits continuous carry loss to below 30W at 200A peak. In a typical BMS, the IQDH88N06LM5CGSCATMA1 is placed in series with the pack output, controlled by an isolated gate driver that responds to BMS fault commands within microseconds. Compared to higher-voltage 100V automotive MOSFETs, the IQDH88N06LM5CGSCATMA1's 60V rating remains safely above 48V nominal plus inductive ringing, while delivering ~30% lower RDS(on) than 100V alternatives - a direct efficiency win for stop-start regenerative braking energy recovery.
推荐
Industrial Motor Drive Half-Bridge
The IQDH88N06LM5CGSCATMA1 is ideal for low-voltage industrial motor drive half-bridges driving 24-48V brushless DC motors, where its 60V breakdown rating comfortably covers 48V bus transients and the 0.86 mΩ RDS(on) at VGS=10V limits thermal dissipation during continuous PWM switching at 20-50 kHz. In a 3-phase BLDC inverter for an industrial pump or fan, six IQDH88N06LM5CGSCATMA1 devices (two per phase) form the power stage, switched by half-bridge drivers like the TLE9180D31QKXUMA1. Compared to IGBTs in the same voltage class, the IQDH88N06LM5CGSCATMA1 switches 5-10x faster, reducing switching loss and enabling quieter operation (lower dV/dt acoustic noise) at the same bus voltage, while the PQFN 5x6 footprint enables compact integrated motor-drive modules.
推荐
Power Tool Battery Pack Protection
Cordless power tools using 18V-36V battery packs benefit from the IQDH88N06LM5CGSCATMA1 as the main pack disconnect MOSFET or as the low-side switch in the motor drive inverter. The 60V V(BR)DSS) provides 50% margin above 36V max battery stacks, and the 0.86 mΩ RDS(on) at VGS=10V keeps conduction losses minimal during high-current bursts (cordless grinders can draw 50-80A peaks). In a 5S Li-ion pack (18V nominal, 21V max) the IQDH88N06LM5CGSCATMA1 can serve as a pack-side protection FET, cutting off the load on overcurrent or overtemperature. Compared to the multiple paralleled 30V FETs often used in cost-sensitive power tools, a single IQDH88N06LM5CGSCATMA1 simplifies the BOM, reduces PCB area, and improves overall robustness due to Infineon's automotive-grade OptiMOS process.
推荐
Point-of-Load (POL) DC-DC Converter
The IQDH88N06LM5CGSCATMA1 fits high-current point-of-load (POL) converter stages converting 24V or 48V intermediate bus to lower voltages (3.3V, 5V, 12V) for server and telecom ASICs, where its low 0.86 mΩ RDS(on) at VGS=10V and OptiMOS 5 process technology deliver best-in-class figure-of-merit (FOM = RDS(on) × Qg) for high-frequency operation above 500 kHz. In a 48V-to-5V/40A POL buck converter, the IQDH88N06LM5CGSCATMA1 serves as the main control FET, achieving >95% peak efficiency at 500 kHz and >93% at 1 MHz. The 60V V(BR)DSS) handles 48V telecom transients comfortably, and the 5x6 PQFN footprint with dual-side cooling keeps the converter within a 25x25 mm footprint - ideal for dense PCB-mounted power delivery.
推荐
推荐产品汇总
工程参考数据： IQDH88N06LM5CGSCATMA1 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | IQDH88N06LM5CGSC | IQE065N10NM5CGSCATMA1 | IQE050N08NM5CGATMA1 | BSC0502NSIATMA1 | ISC151N08NM6ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon (same brand) | Infineon (same brand) | Infineon (same brand) | Infineon (same brand) | Infineon (same brand) |
| Package | PG-WHTFN-9-U02 (PQFN 5x6) | PG-WHTFN-9-U02 (PQFN 5x6) - same | PG-WHTFN-9-U02 (PQFN 5x6) - same | PG-WHTFN-9-U02 (PQFN 5x6) - same | PG-WHTFN-9-U02 (PQFN 5x6) - same | PG-WHTFN-9-U02 (PQFN 5x6) - same |
| Drain-Source Voltage V(BR)DSS | 60 V | 60 V | 100 V | 80 V | 60 V | 80 V |
| RDS(on) typical @ VGS=10V | 0.86 mΩ | 0.86 mΩ | 6.5 mΩ | 5.0 mΩ | 5.0 mΩ | 1.51 mΩ |
| Technology Generation | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 6 |
| Dual-Side Cooling | Yes | Yes | Yes | Yes | No | Yes |
| RoHS Compliance | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
关键差异点
- Industry-leading 0.86 mΩ RDS(on) in 60V class with dual-side cooling （对比 BSC0502NSIATMA1)
- Lowest RDS(on) in Infineon's 60V OptiMOS 5 PQFN 5x6 family （对比 ISC151N08NM6ATMA1)
- 60V rating optimized for 48V telecom, not over-engineered at 100V （对比 IQE065N10NM5CGSCATMA1)
设计说明
Estimated: at continuous 30A load in free air (Ta=25°C), conduction loss equals I² × RDS(on) = 30² × 0.00086 ≈ 0.77W, well within the 3W ambient rating. However, at 30A with Ta=85°C the case temperature rise must be calculated: with PQFN 5x6 on a 1 oz 4-layer board, theta_JA is roughly 50°C/W, giving a 38°C rise. To sustain >30A continuous at ambient temperatures above 60°C, use a top-side thermal interface material and heatsink, or place multiple copper layers with thermal vias directly under the exposed pad. The dual-side cooling capability of PG-WHTFN-9-U02 enables significantly higher current than single-side-cooled DFN equivalents at the same PCB area.
Per Infineon's PG-WHTFN-9-U02 land pattern recommendations: place the drain exposed pad on a copper pour spanning at least 25x15 mm, with a 4x4 array of 0.3 mm thermal vias connecting to inner ground/power planes. Source pins should be connected via a wide top-side copper pour to minimize source inductance, which directly impacts switching loss and gate-drive ringing. Keep the gate loop (gate driver output -> gate pin -> source return) area under 25 mm² to control VGS overshoot at fast switching edges. Add a 10-100 ohm gate-source resistor (Rgs) to prevent false turn-on during high dV/dt transients.
Do not operate the IQDH88N06LM5CGSCATMA1 above 60V drain-source, even transiently - avalanche breakdown at 60-65V may cause parametric shift. Always use a dedicated gate driver (not a logic output) capable of sourcing/sinking 1-2A peak for fast switching - weak gate drives increase transition loss and cause thermal runaway at high frequency. Watch for source-inductance-induced gate-oxide overstress: at very fast dI/dt (above 5 A/ns), VGS may overshoot by tens of volts, potentially exceeding the ±20V VGS absolute maximum. Add a TVS or tighter gate clamping if your layout inductance exceeds 5 nH.
合规信息
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - this is a commercial-grade part. For automotive AEC-Q100 qualified equivalents, contact Infineon or consult the OptiMOS 5 automotive datasheet family.
