IQE008N03LM5ATMA1 vs BSC020N03LSGATMA1 对比

详细并排对比 IQE008N03LM5ATMA1 出自 Infineon 和 BSC020N03LSGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IQE008N03LM5ATMA1 IQE008N03LM5ATMA1 - 30V 0.85mΩ OptiMOS 5 N-Ch MOSFET | Infineon

IQE008N03LM5ATMA1 - 30V 0.85mΩ OptiMOS 5 N-Ch MOSFET | Infineon

IQE008N03LM5ATMA1 ✓ 量产中

规格对比

参数 IQE008N03LM5ATMA1 BSC020N03LSGATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.94 $0.42
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) Max 30 V —
Continuous Drain Current (ID) at TA=25°C 27 A —
Continuous Drain Current (ID) at TC=25°C 253 A —
On-Resistance RDS(on) Typical 0.85 mΩ (at 20 A, VGS=10 V per LCSC datasheet snippet) —
Gate Threshold Voltage (VGS(th)) 2 V (at 250 µA per LCSC snippet) 1 V to 2.2 V (typical range, per datasheet)
Power Dissipation at TA=25°C 2.1 W —
Power Dissipation at TC=25°C 89 W —
封装 PG-TSON-8-4 (3.3 x 3.3 mm), Source-Down —
安装类型 Surface Mount Surface Mount
工作温度范围 -55°C to +150°C (typical MOSFET junction rating) -55 C to +150 C (junction)
Gate-Source Voltage (VGS) Max ±20 V (typical MOSFET rating) —
Technology OptiMOS 5, Source-Down —
RoHS 状态 Compliant (per LCSC listing) Compliant
MSL 等级 [DATA_NEEDED: MSL level] 1 (per JEDEC J-STD-020, per Infineon datasheet)
Series — OptiMOS 3
FET Type — N-Channel
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Ta=25C — 28 A
Continuous Drain Current (ID) at Tc=25C — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current value]
Gate-Source Voltage (VGS) — +/-20 V
On-State Resistance (RDS(on)) at VGS=10V — approximately 2.0 mOhm
Power Dissipation (PD) at Ta=25C — 2.5 W
Power Dissipation (PD) at Tc=25C — 96 W
封装 / 外壳 — PG-TDSON-8-1 (TDSON EP, 5 mm x 6 mm)
Packaging — Tape & Reel

数据手册与资源

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