IQE008N03LM5ATMA1 vs BSC020N03LSGATMA1 Comparison
Detailed side-by-side comparison of IQE008N03LM5ATMA1 by Infineon and BSC020N03LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE008N03LM5ATMA1
IQE008N03LM5ATMA1 - 30V 0.85mΞ© OptiMOS 5 N-Ch MOSFET | Infineon
IQE008N03LM5ATMA1 β ActiveInfineon
BSC020N03LSGATMA1
BSC020N03LSGATMA1 - 30V N-Channel OptiMOS 3, 100A TDSON-8 | Infineon
BSC020N03LSGATMA1 β ActiveSpecification Comparison
| Parameter | IQE008N03LM5ATMA1 | BSC020N03LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.94 | $0.42 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) Max | 30 V | β |
| Continuous Drain Current (ID) at TA=25Β°C | 27 A | β |
| Continuous Drain Current (ID) at TC=25Β°C | 253 A | β |
| On-Resistance RDS(on) Typical | 0.85 mΞ© (at 20 A, VGS=10 V per LCSC datasheet snippet) | β |
| Gate Threshold Voltage (VGS(th)) | 2 V (at 250 Β΅A per LCSC snippet) | 1 V to 2.2 V (typical range, per datasheet) |
| Power Dissipation at TA=25Β°C | 2.1 W | β |
| Power Dissipation at TC=25Β°C | 89 W | β |
| Package | PG-TSON-8-4 (3.3 x 3.3 mm), Source-Down | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55Β°C to +150Β°C (typical MOSFET junction rating) | -55 C to +150 C (junction) |
| Gate-Source Voltage (VGS) Max | Β±20 V (typical MOSFET rating) | β |
| Technology | OptiMOS 5, Source-Down | β |
| RoHS Status | Compliant (per LCSC listing) | Compliant |
| MSL Level | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020, per Infineon datasheet) |
| Series | β | OptiMOS 3 |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) at Ta=25C | β | 28 A |
| Continuous Drain Current (ID) at Tc=25C | β | 100 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current value] |
| Gate-Source Voltage (VGS) | β | +/-20 V |
| On-State Resistance (RDS(on)) at VGS=10V | β | approximately 2.0 mOhm |
| Power Dissipation (PD) at Ta=25C | β | 2.5 W |
| Power Dissipation (PD) at Tc=25C | β | 96 W |
| Package / Case | β | PG-TDSON-8-1 (TDSON EP, 5 mm x 6 mm) |
| Packaging | β | Tape & Reel |