IQE008N03LM5CGATMA1 vs IQE008N03LM5ATMA1 对比

详细并排对比 IQE008N03LM5CGATMA1 出自 Infineon 和 IQE008N03LM5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IQE008N03LM5ATMA1 IQE008N03LM5ATMA1 - 30V 0.85mΩ OptiMOS 5 N-Ch MOSFET | Infineon

IQE008N03LM5ATMA1 - 30V 0.85mΩ OptiMOS 5 N-Ch MOSFET | Infineon

IQE008N03LM5ATMA1 ✓ 量产中

规格对比

参数 IQE008N03LM5CGATMA1 IQE008N03LM5ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.74 $0.94
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 OptiMOS 5
Polarity / Channel Type N-Channel N-Channel
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at Ta=25C 27 A —
Continuous Drain Current (ID) at Tc=25C 253 A —
On-Resistance (RDS(on)) at VGS=10V 0.85 mOhm (typ) @ 20 A —
Gate-Source Voltage (VGS) Max +/-16 V ±20 V (typical MOSFET rating)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] 2 V (at 250 µA per LCSC snippet)
Total Gate Charge (Qg) at VGS=10V 64 nC (typ) —
Input Capacitance (Ciss) at VDS=15V 5700 pF (typ) —
Output Capacitance (Coss) [DATA_NEEDED: Coss typical] —
Reverse Transfer Capacitance (Crss) [DATA_NEEDED: Crss typical] —
Power Dissipation (PD) at Ta=25C 2.1 W —
Power Dissipation (PD) at Tc=25C 89 W —
工作温度范围 -55C to +150C (junction) -55°C to +150°C (typical MOSFET junction rating)
封装 PG-TTFN-9-1 (8-PowerTDFN) with wettable flanks PG-TSON-8-4 (3.3 x 3.3 mm), Source-Down
安装类型 Surface Mount Surface Mount
Lead-Free / RoHS Yes (compliant per Infineon product page) —
AEC-Q100 Automotive [DATA_NEEDED: AEC-Q100 qualification status] —
Drain-Source Voltage (VDS) Max — 30 V
Continuous Drain Current (ID) at TA=25°C — 27 A
Continuous Drain Current (ID) at TC=25°C — 253 A
On-Resistance RDS(on) Typical — 0.85 mΩ (at 20 A, VGS=10 V per LCSC datasheet snippet)
Power Dissipation at TA=25°C — 2.1 W
Power Dissipation at TC=25°C — 89 W
Technology — OptiMOS 5, Source-Down
RoHS 状态 — Compliant (per LCSC listing)
MSL 等级 — [DATA_NEEDED: MSL level]

数据手册与资源

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