IQE008N03LM5CGATMA1 vs IQE008N03LM5ATMA1 Comparison
Detailed side-by-side comparison of IQE008N03LM5CGATMA1 by Infineon and IQE008N03LM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE008N03LM5CGATMA1
IQE008N03LM5CGATMA1 - 30V 253A OptiMOS 5 N-Channel MOSFET | Infineon
IQE008N03LM5CGATMA1 β ActiveInfineon
IQE008N03LM5ATMA1
IQE008N03LM5ATMA1 - 30V 0.85mΞ© OptiMOS 5 N-Ch MOSFET | Infineon
IQE008N03LM5ATMA1 β ActiveSpecification Comparison
| Parameter | IQE008N03LM5CGATMA1 | IQE008N03LM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.74 | $0.94 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | OptiMOS 5 |
| Polarity / Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) at Ta=25C | 27 A | β |
| Continuous Drain Current (ID) at Tc=25C | 253 A | β |
| On-Resistance (RDS(on)) at VGS=10V | 0.85 mOhm (typ) @ 20 A | β |
| Gate-Source Voltage (VGS) Max | +/-16 V | Β±20 V (typical MOSFET rating) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | 2 V (at 250 Β΅A per LCSC snippet) |
| Total Gate Charge (Qg) at VGS=10V | 64 nC (typ) | β |
| Input Capacitance (Ciss) at VDS=15V | 5700 pF (typ) | β |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss typical] | β |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss typical] | β |
| Power Dissipation (PD) at Ta=25C | 2.1 W | β |
| Power Dissipation (PD) at Tc=25C | 89 W | β |
| Operating Temperature Range | -55C to +150C (junction) | -55Β°C to +150Β°C (typical MOSFET junction rating) |
| Package | PG-TTFN-9-1 (8-PowerTDFN) with wettable flanks | PG-TSON-8-4 (3.3 x 3.3 mm), Source-Down |
| Mounting Type | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (compliant per Infineon product page) | β |
| AEC-Q100 Automotive | [DATA_NEEDED: AEC-Q100 qualification status] | β |
| Drain-Source Voltage (VDS) Max | β | 30 V |
| Continuous Drain Current (ID) at TA=25Β°C | β | 27 A |
| Continuous Drain Current (ID) at TC=25Β°C | β | 253 A |
| On-Resistance RDS(on) Typical | β | 0.85 mΞ© (at 20 A, VGS=10 V per LCSC datasheet snippet) |
| Power Dissipation at TA=25Β°C | β | 2.1 W |
| Power Dissipation at TC=25Β°C | β | 89 W |
| Technology | β | OptiMOS 5, Source-Down |
| RoHS Status | β | Compliant (per LCSC listing) |
| MSL Level | β | [DATA_NEEDED: MSL level] |