IQE008N03LM5CGATMA1 vs IQE008N03LM5ATMA1 비교

다음의 상세 나란히 비교: IQE008N03LM5CGATMA1 제조: Infineon 및 IQE008N03LM5ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IQE008N03LM5CGATMA1 IQE008N03LM5ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.74 $0.94
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 OptiMOS 5
Polarity / Channel Type N-Channel N-Channel
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at Ta=25C 27 A —
Continuous Drain Current (ID) at Tc=25C 253 A —
On-Resistance (RDS(on)) at VGS=10V 0.85 mOhm (typ) @ 20 A —
Gate-Source Voltage (VGS) Max +/-16 V ±20 V (typical MOSFET rating)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] 2 V (at 250 µA per LCSC snippet)
Total Gate Charge (Qg) at VGS=10V 64 nC (typ) —
Input Capacitance (Ciss) at VDS=15V 5700 pF (typ) —
Output Capacitance (Coss) [DATA_NEEDED: Coss typical] —
Reverse Transfer Capacitance (Crss) [DATA_NEEDED: Crss typical] —
Power Dissipation (PD) at Ta=25C 2.1 W —
Power Dissipation (PD) at Tc=25C 89 W —
동작 온도 범위 -55C to +150C (junction) -55°C to +150°C (typical MOSFET junction rating)
패키지 PG-TTFN-9-1 (8-PowerTDFN) with wettable flanks PG-TSON-8-4 (3.3 x 3.3 mm), Source-Down
실장 유형 Surface Mount Surface Mount
Lead-Free / RoHS Yes (compliant per Infineon product page) —
AEC-Q100 Automotive [DATA_NEEDED: AEC-Q100 qualification status] —
Drain-Source Voltage (VDS) Max — 30 V
Continuous Drain Current (ID) at TA=25°C — 27 A
Continuous Drain Current (ID) at TC=25°C — 253 A
On-Resistance RDS(on) Typical — 0.85 mΩ (at 20 A, VGS=10 V per LCSC datasheet snippet)
Power Dissipation at TA=25°C — 2.1 W
Power Dissipation at TC=25°C — 89 W
Technology — OptiMOS 5, Source-Down
RoHS 상태 — Compliant (per LCSC listing)
MSL 레벨 — [DATA_NEEDED: MSL level]

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