IQE012N03LM5CGSCATMA1 vs ISZ019N03L5SATMA1 对比
详细并排对比 IQE012N03LM5CGSCATMA1 出自 Infineon 和 ISZ019N03L5SATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
ISZ019N03L5SATMA1 - 30V 1.9mΩ OptiMOS 5 N-Channel MOSFET | Infineon
ISZ019N03L5SATMA1 ✓ 量产中规格对比
| 参数 | IQE012N03LM5CGSCATMA1 | ISZ019N03L5SATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.55 | $0.48 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (trench MOSFET) | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) @ Ta | 34 A | — |
| Continuous Drain Current (ID) @ Tc | 224 A | — |
| Maximum RDS(on) @ VGS=10V | 1.15 mΩ | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 107 W | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (typ, per Merlin listing) | 2 V (typical) |
| 封装 | PG-WHTFN-9-1 (PQFN 3.3 × 3.3 mm Source-Down dual-side cooled) | PG-TSDSON-8-FL (5x6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作结温 | -55 °C to +175 °C | — |
| MSL 等级 | 1 (per JEDEC J-STD-020, floor life unlimited) | 1 (per JEDEC J-STD-020) |
| RoHS 状态 | Compliant | — |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 (<= 40V) |
| Polarity / Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 22 A |
| Continuous Drain Current (ID) at TC=25C | — | 40 A |
| RDS(on) at VGS=10V | — | 1.9 mΩ (typical, ID=20A) |
| Gate-Source Voltage Rating (VGS) | — | ±20 V |
| Total Gate Charge (Qg) | — | 44 nC at VGS=10V |
| Input Capacitance (Ciss) | — | 2800 pF at VDS=15V |
| 工作温度范围 | — | -55C to +175C (TJ max) |
| RoHS / REACH | — | Compliant |
| Avalanche Rated | — | Yes |
| RG-tested | — | 100% |