IQE012N03LM5CGSCATMA1 vs ISZ019N03L5SATMA1 Comparison

Detailed side-by-side comparison of IQE012N03LM5CGSCATMA1 by Infineon and ISZ019N03L5SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQE012N03LM5CGSCATMA1

IQE012N03LM5CGSCATMA1 - 30V 1.15mΞ© OptiMOS 5 MOSFET | Infineon

IQE012N03LM5CGSCATMA1 βœ“ Active

Specification Comparison

Parameter IQE012N03LM5CGSCATMA1 ISZ019N03L5SATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.55 $0.48
FET Type N-Channel β€”
Technology OptiMOS 5 (trench MOSFET) β€”
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) @ Ta 34 A β€”
Continuous Drain Current (ID) @ Tc 224 A β€”
Maximum RDS(on) @ VGS=10V 1.15 mΞ© β€”
Power Dissipation (Ta) 2.5 W β€”
Power Dissipation (Tc) 107 W β€”
Gate Threshold Voltage (VGS(th)) 2 V (typ, per Merlin listing) 2 V (typical)
Package PG-WHTFN-9-1 (PQFN 3.3 Γ— 3.3 mm Source-Down dual-side cooled) PG-TSDSON-8-FL (5x6 mm)
Mounting Type Surface Mount Surface Mount
Operating Junction Temperature -55 Β°C to +175 Β°C β€”
MSL Level 1 (per JEDEC J-STD-020, floor life unlimited) 1 (per JEDEC J-STD-020)
RoHS Status Compliant β€”
Lead-Free Yes β€”
Manufacturer β€” Infineon Technologies
Product Family β€” OptiMOS 5 (<= 40V)
Polarity / Channel Type β€” N-Channel
Continuous Drain Current (ID) at TA=25C β€” 22 A
Continuous Drain Current (ID) at TC=25C β€” 40 A
RDS(on) at VGS=10V β€” 1.9 mΞ© (typical, ID=20A)
Gate-Source Voltage Rating (VGS) β€” Β±20 V
Total Gate Charge (Qg) β€” 44 nC at VGS=10V
Input Capacitance (Ciss) β€” 2800 pF at VDS=15V
Operating Temperature Range β€” -55C to +175C (TJ max)
RoHS / REACH β€” Compliant
Avalanche Rated β€” Yes
RG-tested β€” 100%

Datasheets & Resources

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