IQE013N04LM6ATMA1 vs IQE020N04LM6CGATMA1 对比
详细并排对比 IQE013N04LM6ATMA1 出自 Infineon 和 IQE020N04LM6CGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IQE013N04LM6ATMA1 - 40V 1.35mΩ OptiMOS N-FET, PQFN 3.3x3.3 | Infineon
IQE013N04LM6ATMA1 ✓ 量产中规格对比
| 参数 | IQE013N04LM6ATMA1 | IQE020N04LM6CGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.71 | $1.75 |
| Technology | OptiMOS N-channel trench MOSFET | OptiMOS 6, TrenchFET-class |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current (Ta) | 31 A | — |
| Continuous Drain Current (Tc) | 205 A | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 107 W | — |
| On-Resistance RDS(on) max | [DATA_NEEDED: RDS(on) max value at VGS=10V] | — |
| On-Resistance RDS(on) typ | 1.35 mΩ @ VGS=10 V, ID=20 A | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (typ) | — |
| 封装 | PG-TSON-8-4 / PQFN 3.3x3.3 mm Source-Down | PG-TTFN-9-3 (PQFN 3.3x3.3, source-down center-gate) |
| 工作温度范围 | -55 °C to +175 °C | -55°C to +150°C |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS 状态 | Compliant | Compliant |
| Source-Down Topology | Yes (flip-chip die attach, drain on top thermal pad) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 6 |
| 晶体管类型 | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA=25°C | — | 25 A |
| Continuous Drain Current (ID) at TC=25°C | — | 166 A |
| Power Dissipation (PD) at TA=25°C | — | 2.5 W |
| Power Dissipation (PD) at TC=25°C | — | 107 W |
| On-State Resistance (RDS(on)) typical @ VGS=10V | — | 2.0 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Gate Charge (Qg) typical | — | [DATA_NEEDED: Qg value] |
| Configuration | — | Single N-Channel, source-down |
| MSL 等级 | — | MSL1 (per JEDEC J-STD-020) |