IQE013N04LM6ATMA1 vs IQE020N04LM6CGATMA1 Comparison

Detailed side-by-side comparison of IQE013N04LM6ATMA1 by Infineon and IQE020N04LM6CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQE020N04LM6CGATMA1 IQE020N04LM6CGATMA1 - 40V 2.0mΩ OptiMOS 6 MOSFET | Infineon

IQE020N04LM6CGATMA1 - 40V 2.0mΩ OptiMOS 6 MOSFET | Infineon

IQE020N04LM6CGATMA1 ✓ Active

Specification Comparison

Parameter IQE013N04LM6ATMA1 IQE020N04LM6CGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Technology OptiMOS N-channel trench MOSFET OptiMOS 6, TrenchFET-class
Polarity N-Channel —
Drain-Source Voltage (VDS) 40 V 40 V
Gate-Source Voltage (VGS) ±20 V —
Continuous Drain Current (Ta) 31 A —
Continuous Drain Current (Tc) 205 A —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 107 W —
On-Resistance RDS(on) max [DATA_NEEDED: RDS(on) max value at VGS=10V] —
On-Resistance RDS(on) typ 1.35 mΩ @ VGS=10 V, ID=20 A —
Gate Threshold Voltage (VGS(th)) 2 V (typ) —
Package PG-TSON-8-4 / PQFN 3.3x3.3 mm Source-Down PG-TTFN-9-3 (PQFN 3.3x3.3, source-down center-gate)
Operating Temperature Range -55 °C to +175 °C -55°C to +150°C
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
Source-Down Topology Yes (flip-chip die attach, drain on top thermal pad) —
Manufacturer — Infineon Technologies
Series — OptiMOS 6
Transistor Type — N-Channel MOSFET
Continuous Drain Current (ID) at TA=25°C — 25 A
Continuous Drain Current (ID) at TC=25°C — 166 A
Power Dissipation (PD) at TA=25°C — 2.5 W
Power Dissipation (PD) at TC=25°C — 107 W
On-State Resistance (RDS(on)) typical @ VGS=10V — 2.0 mΩ
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) value]
Gate Charge (Qg) typical — [DATA_NEEDED: Qg value]
Configuration — Single N-Channel, source-down
MSL Level — MSL1 (per JEDEC J-STD-020)

Datasheets & Resources

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