IQE018N06NM6CGATMA1 vs IQEH54NE2LM7UCGATMA1 对比
详细并排对比 IQE018N06NM6CGATMA1 出自 Infineon 和 IQEH54NE2LM7UCGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IQEH54NE2LM7UCGATMA1 - 25V OptiMOS 7 N-Channel MOSFET | Infineon
IQEH54NE2LM7UCGATMA1 ✓ 量产中规格对比
| 参数 | IQE018N06NM6CGATMA1 | IQEH54NE2LM7UCGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.21 | $1.95 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 60V | OptiMOS 7 Power-Transistor |
| Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (V_DS) | 60 V | — |
| Continuous Drain Current (I_D, Tc) | 178 A | — |
| Continuous Drain Current (I_D, Ta) | 25 A | — |
| R_DS(on) max (V_GS=10 V) | 1.8 mΩ | — |
| Gate Threshold Voltage (V_GS(th)) | 3.3 V (logic-level compatible) | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 125 W | — |
| 封装 | PG-TTFN-9-3 (TOLL/TTFN) | PG-TTFN-9-3 |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55C to +175C (junction) | -55C to +150C (typical MOSFET range) |
| Technology | Trench MOSFET, OptiMOS 6 | — |
| RoHS Compliance | Compliant | — |
| Drain-Source Voltage (VDS) | — | 25 V |
| Continuous Drain Current (ID) at Ta | — | 52 A |
| Continuous Drain Current (ID) at Tc | — | 406 A |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc | — | 150 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| On-Resistance (RDS(on)) at 10V VGS | — | [DATA_NEEDED: RDS(on) max in mohm at VGS=10V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical in nC] |
| RoHS 状态 | — | Compliant |
| MSL 等级 | — | [DATA_NEEDED: MSL rating] |