IQE018N06NM6CGATMA1 vs IQEH54NE2LM7UCGATMA1 Comparison

Detailed side-by-side comparison of IQE018N06NM6CGATMA1 by Infineon and IQEH54NE2LM7UCGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQE018N06NM6CGATMA1

IQE018N06NM6CGATMA1 - 60V 178A OptiMOS 6 N-MOSFET | Infineon

IQE018N06NM6CGATMA1 βœ“ Active
Infineon
IQEH54NE2LM7UCGATMA1

IQEH54NE2LM7UCGATMA1 - 25V OptiMOS 7 N-Channel MOSFET | Infineon

IQEH54NE2LM7UCGATMA1 βœ“ Active

Specification Comparison

Parameter IQE018N06NM6CGATMA1 IQEH54NE2LM7UCGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.21 $1.95
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 6 60V OptiMOS 7 Power-Transistor
Channel Type N-Channel N-Channel
Drain-Source Voltage (V_DS) 60 V β€”
Continuous Drain Current (I_D, Tc) 178 A β€”
Continuous Drain Current (I_D, Ta) 25 A β€”
R_DS(on) max (V_GS=10 V) 1.8 mΞ© β€”
Gate Threshold Voltage (V_GS(th)) 3.3 V (logic-level compatible) β€”
Power Dissipation (Ta) 2.5 W β€”
Power Dissipation (Tc) 125 W β€”
Package PG-TTFN-9-3 (TOLL/TTFN) PG-TTFN-9-3
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +175C (junction) -55C to +150C (typical MOSFET range)
Technology Trench MOSFET, OptiMOS 6 β€”
RoHS Compliance Compliant β€”
Drain-Source Voltage (VDS) β€” 25 V
Continuous Drain Current (ID) at Ta β€” 52 A
Continuous Drain Current (ID) at Tc β€” 406 A
Power Dissipation at Ta β€” 2.5 W
Power Dissipation at Tc β€” 150 W
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical/min/max]
On-Resistance (RDS(on)) at 10V VGS β€” [DATA_NEEDED: RDS(on) max in mohm at VGS=10V]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg typical in nC]
RoHS Status β€” Compliant
MSL Level β€” [DATA_NEEDED: MSL rating]

Datasheets & Resources

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