IQE050N08NM5CGATMA1 vs IQDH88N06LM5CGSCATMA1 对比
详细并排对比 IQE050N08NM5CGATMA1 出自 Infineon 和 IQDH88N06LM5CGSCATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IQE050N08NM5CGATMA1 | IQDH88N06LM5CGSCATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.75 | $2.31 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (Ta) | 16 A | — |
| Continuous Drain Current (Tc) | 101 A | — |
| On-Resistance RDS(on) Max | 5.0 mΩ | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 100 W | — |
| 封装 | PG-TTFN-9-1 (Surface Mount) | PG-WHTFN-9-U02 (PQFN 5x6) |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 (Source-Down) | OptiMOS 5 (trench) |
| Gate Threshold Vgs(th) Typ | [DATA_NEEDED: Vgs(th) typical value] | — |
| 工作温度 | -55°C to +175°C (TJ max) | — |
| Total Gate Charge Qg Typ | [DATA_NEEDED: total gate charge Qg typical] | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| 晶体管类型 | — | N-Channel MOSFET |
| Drain-Source Voltage (V(BR)DSS) | — | 60 V |
| Continuous Drain Current (Ta=25°C) | — | 42 A |
| 连续漏极电流（TC=25°C） | — | 447 A |
| On-Resistance RDS(on) typical @ VGS=10V | — | 0.86 mΩ |
| Power Dissipation (Ta=25°C) | — | 3 W |
| 功耗（TC=25°C） | — | 333 W |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate Charge Qg typical | — | [DATA_NEEDED: Qg typical nC] |
| 工作温度范围 | — | -55°C to +175°C (TJ) |
| 引脚数量 | — | 9 (with exposed pad) |
| Cooling | — | Dual-side cooling capable |
| Polarity | — | N-Channel |
| Configuration | — | Single |