IQE050N08NM5CGATMA1 vs IQE008N03LM5CGATMA1 对比

详细并排对比 IQE050N08NM5CGATMA1 出自 Infineon 和 IQE008N03LM5CGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IQE050N08NM5CGATMA1 IQE050N08NM5CGATMA1 - 80V N-Ch MOSFET 5mΩ Source-Down | Infineon

IQE050N08NM5CGATMA1 - 80V N-Ch MOSFET 5mΩ Source-Down | Infineon

IQE050N08NM5CGATMA1 ✓ 量产中

规格对比

参数 IQE050N08NM5CGATMA1 IQE008N03LM5CGATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.75 $0.74
FET Type N-Channel —
Drain-Source Voltage (VDS) 80 V 30 V
Continuous Drain Current (Ta) 16 A —
Continuous Drain Current (Tc) 101 A —
On-Resistance RDS(on) Max 5.0 mΩ —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 100 W —
封装 PG-TTFN-9-1 (Surface Mount) PG-TTFN-9-1 (8-PowerTDFN) with wettable flanks
安装类型 Surface Mount Surface Mount
Technology OptiMOS 5 (Source-Down) —
Gate Threshold Vgs(th) Typ [DATA_NEEDED: Vgs(th) typical value] —
工作温度 -55°C to +175°C (TJ max) —
Total Gate Charge Qg Typ [DATA_NEEDED: total gate charge Qg typical] —
RoHS 状态 Compliant —
MSL 等级 [DATA_NEEDED: MSL rating] —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 5
Polarity / Channel Type — N-Channel
Continuous Drain Current (ID) at Ta=25C — 27 A
Continuous Drain Current (ID) at Tc=25C — 253 A
On-Resistance (RDS(on)) at VGS=10V — 0.85 mOhm (typ) @ 20 A
Gate-Source Voltage (VGS) Max — +/-16 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max]
Total Gate Charge (Qg) at VGS=10V — 64 nC (typ)
Input Capacitance (Ciss) at VDS=15V — 5700 pF (typ)
Output Capacitance (Coss) — [DATA_NEEDED: Coss typical]
Reverse Transfer Capacitance (Crss) — [DATA_NEEDED: Crss typical]
Power Dissipation (PD) at Ta=25C — 2.1 W
Power Dissipation (PD) at Tc=25C — 89 W
工作温度范围 — -55C to +150C (junction)
Lead-Free / RoHS — Yes (compliant per Infineon product page)
AEC-Q100 Automotive — [DATA_NEEDED: AEC-Q100 qualification status]

数据手册与资源

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