IQE050N08NM5CGATMA1 vs IQE008N03LM5CGATMA1 비교

다음의 상세 나란히 비교: IQE050N08NM5CGATMA1 제조: Infineon 및 IQE008N03LM5CGATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IQE050N08NM5CGATMA1 IQE008N03LM5CGATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.75 $0.74
FET Type N-Channel —
Drain-Source Voltage (VDS) 80 V 30 V
Continuous Drain Current (Ta) 16 A —
Continuous Drain Current (Tc) 101 A —
On-Resistance RDS(on) Max 5.0 mΩ —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 100 W —
패키지 PG-TTFN-9-1 (Surface Mount) PG-TTFN-9-1 (8-PowerTDFN) with wettable flanks
실장 유형 Surface Mount Surface Mount
Technology OptiMOS 5 (Source-Down) —
Gate Threshold Vgs(th) Typ [DATA_NEEDED: Vgs(th) typical value] —
동작 온도 -55°C to +175°C (TJ max) —
Total Gate Charge Qg Typ [DATA_NEEDED: total gate charge Qg typical] —
RoHS 상태 Compliant —
MSL 레벨 [DATA_NEEDED: MSL rating] —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 5
Polarity / Channel Type — N-Channel
Continuous Drain Current (ID) at Ta=25C — 27 A
Continuous Drain Current (ID) at Tc=25C — 253 A
On-Resistance (RDS(on)) at VGS=10V — 0.85 mOhm (typ) @ 20 A
Gate-Source Voltage (VGS) Max — +/-16 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max]
Total Gate Charge (Qg) at VGS=10V — 64 nC (typ)
Input Capacitance (Ciss) at VDS=15V — 5700 pF (typ)
Output Capacitance (Coss) — [DATA_NEEDED: Coss typical]
Reverse Transfer Capacitance (Crss) — [DATA_NEEDED: Crss typical]
Power Dissipation (PD) at Ta=25C — 2.1 W
Power Dissipation (PD) at Tc=25C — 89 W
동작 온도 범위 — -55C to +150C (junction)
Lead-Free / RoHS — Yes (compliant per Infineon product page)
AEC-Q100 Automotive — [DATA_NEEDED: AEC-Q100 qualification status]

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