IQE008N03LM5SCATMA1 - 30V 0.85mΩ N-Ch MOSFET, PG-WHSON-8
料号： IQE008N03LM5SCATMA1 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.68 | $16.80 |
| 100 | $1.49 | $149.00 |
| 500 | $1.32 | $660.00 |
| 1,000 | $1.18 | $1,180.00 |
IQE008N03LM5SCATMA1 概述
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used to efficiently route and regulate current in power conversion circuits. The OptiMOS 5 family from Infineon represents the fifth generation of trench MOSFET technology, optimized for low RDS(on), low gate charge, and high switching frequencies. The IQE008N03LM5SCATMA1 belongs to this family at the 30 V node, designed for synchronous rectification in switched-mode power supplies (SMPS), telecom point-of-load converters, and high-current battery protection circuits.
Key features of the IQE008N03LM5SCATMA1 include a maximum RDS(on) of 0.85 mΩ at VGS = 10 V, a 2 V typical gate threshold voltage, and Source-Down packaging that flips the silicon die so the source potential is bonded to the large bottom pad. This construction lowers parasitic source inductance, improves thermal dissipation, and enables shorter high-current loops on the PCB. The device supports standard 10 V gate drive and is qualified for industrial-grade operating conditions.
The Source-Down architecture simplifies PCB layout by exposing the thermal pad on the source side rather than the drain side, allowing direct attachment to a grounded copper pour for both thermal and electrical return. Compared to traditional drain-down DFN packages, this arrangement enables higher continuous current handling and improved EMI performance by reducing the high-current loop area. Infineon's OptiMOS 5 process also reduces figure-of-merit (FOM = RDS(on) × Qg) for higher switching frequency operation above 500 kHz.
Typical applications for the IQE008N03LM5SCATMA1 include synchronous rectification in 12 V buck converters for server and telecom point-of-load rails, high-current hot-swap circuits in 24 V industrial bus systems, battery management protection FETs in 4S-8S Li-ion packs, USB-PD sink power paths, and motor drive half-bridges in low-voltage robotics. The Source-Down dual-side cooling is particularly valuable in slim-profile blade servers and 1U telecom equipment where top-side cooling is unavailable.
When designing with this MOSFET, place a 10 nF to 100 nF ceramic bypass capacitor close to the gate pin to suppress parasitic turn-on from Miller coupling. For high-current applications, ensure the PCB copper area on both source and drain pads is sufficient to carry the continuous current without exceeding 25 °C temperature rise. Use VGS = 10 V drive to achieve the datasheet 0.85 mΩ RDS(on); with VGS = 4.5 V the on-resistance increases approximately 1.4× to 1.2 mΩ.
This page synthesizes distributor stock and pricing, drop-in alternatives verified against the same PG-WHSON-8 footprint, and practical design notes not consolidated on the manufacturer datasheet.
直接替换替代料： IQE008N03LM5SCATMA1 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： IQE008N03LM5SCATMA1 （相同外形与封装尺寸） ——差异在于 Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), Gate Threshold Voltage (VGS(th)).
快速对比工具——选择替代料号进行并排对比：
IQE012N03LM5CGSCATMA1
✅ 直接替换✓ 有现货
$1.55 / 个
查看数据手册 →IQEH50NE2LM7UCGSCATMA1
✅ 直接替换✓ 有现货
$1.78 / 个
查看数据手册 →IQE036N08NM6CGSCATMA1
✅ 直接替换✓ 有现货
$0.88 / 个
查看数据手册 →IQE220N15NM5CGSCATMA1
✅ 直接替换✓ 有现货
$2.18 / 个
查看数据手册 →IQE008N03LM5SCATMA1 最大额定值与电气特性
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 5 |
| Technology | Trench MOSFET (N-Channel) |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) | 252 A |
| On-Resistance (RDS(on)) max | 0.85 mΩ at VGS = 10 V |
| Gate Threshold Voltage (VGS(th)) | 2 V (typical) |
| Gate Drive Voltage | 10 V (recommended) |
| 封装 | PG-WHSON-8 (Source-Down) |
| Configuration | Single N-Channel |
| 安装类型 | Surface Mount |
| Cooling Architecture | Source-Down, dual-side cooling |
| 工作温度范围 | -55 °C to +150 °C |
| RoHS 状态 | Compliant |
IQE008N03LM5SCATMA1 引脚配置
| 引脚 1 | G1 — Gate of MOSFET 1 |
| 引脚 2 | S1 — Source of MOSFET 1 (also connected to thermal pad - Source-Down) |
| 引脚 3 | S1 — Source of MOSFET 1 (also connected to thermal pad - Source-Down) |
| 引脚 4 | S1 — Source of MOSFET 1 (also connected to thermal pad - Source-Down) |
| 引脚 5 | D1 — Drain of MOSFET 1 |
| 引脚 6 | D1 — Drain of MOSFET 1 |
| 引脚 7 | D1 — Drain of MOSFET 1 |
| 引脚 8 | D1 — Drain of MOSFET 1 |
安全工作区 - IQE008N03LM5SCATMA1
典型应用
IQE008N03LM5SCATMA1 适用于 7 应用s: 12V Synchronous Rectification in Server POL Converters, Telecom 48V Hot-Swap Protection, Li-ion Battery Pack Protection FET (4S-8S), USB-PD Sink Power Path Switch, Industrial 24V Brushless DC Motor Drive, E-Bike and Light EV Power Train, Solar Charge Controller MPPT Stage.
12V Synchronous Rectification in Server POL Converters
The IQE008N03LM5SCATMA1 is ideal as the low-side synchronous rectifier FET in 12 V input buck converters that feed point-of-load rails for server CPUs and ASICs. Its 0.85 mΩ RDS(on) at VGS = 10 V minimizes conduction loss at high load current, while the Source-Down PG-WHSON-8 package enables direct attachment to the bottom copper pour for dual-side cooling. The Source-Down architecture also reduces the high-current loop inductance between the synchronous FET and the bootstrap capacitor, lowering voltage spikes and switching loss above 500 kHz. Compared with a standard SuperSO8 part, the IQE008N03LM5SCATMA1 typically allows a 15-20 °C lower junction temperature at 100 A continuous current.
推荐
Telecom 48V Hot-Swap Protection
In 48 V nominal telecom systems (with actual bus voltage 36 V to 60 V transient), the IQE008N03LM5SCATMA1 is best suited for the low-side current-sense path or as the 12 V auxiliary rail switch rather than the main 48 V FET. Its 30 V VDS rating cleanly covers 12 V distribution rails in -48 V telecom architectures. The Source-Down package supports the high inrush currents encountered during board insertion into a live backplane, and the 252 A continuous current rating provides ample margin for hot-swap events. A 10 kΩ gate-source pull-down resistor and 12 V Zener clamp are recommended for inrush protection and dv/dt immunity.
推荐
Li-ion Battery Pack Protection FET (4S-8S)
The IQE008N03LM5SCATMA1 is well suited as the low-side discharge protection FET in 4S to 8S Li-ion battery packs (nominal 14.4 V to 28.8 V), where its 30 V VDS provides safe margin below the maximum 8S charging voltage of 33.6 V. The 0.85 mΩ RDS(on) keeps conduction loss during high-current discharge to approximately 8.5 W at 100 A, well within thermal limits for the Source-Down package mounted directly on the battery tab. Dual-side cooling allows the pack to operate at higher C-rates without overheating. A 10 kΩ gate-source resistor holds the FET off during sleep, and a 12 V TVS Zener across gate-source prevents VGS overvoltage during fault conditions.
推荐
USB-PD Sink Power Path Switch
The IQE008N03LM5SCATMA1 is well suited as the main power-path MOSFET in USB-PD 3.1 sink applications that negotiate up to 28 V / 36 V input. Its 30 V VDS provides adequate margin for the 28 V Extended Power Range (EPR) level, while the 0.85 mΩ RDS(on) maintains high efficiency even at 5 A continuous load. The Source-Down PG-WHSON-8 package enables slim dongle and hub form factors by exposing the thermal pad to the bottom copper pour. For EPR applications above 28 V, designers should select the IQEH50NE2LM7UCGSCATMA1 (60 V VDS) instead to provide additional transient margin.
推荐
Industrial 24V Brushless DC Motor Drive
The IQE008N03LM5SCATMA1 functions as the low-side FET in the half-bridge of a 24 V brushless DC (BLDC) motor drive, with 30 V VDS providing safe headroom for 24 V bus transients up to 36 V. The Source-Down PG-WHSON-8 package allows direct mounting to the chassis ground plane for thermal dissipation in sealed motor housings, and the 252 A continuous current rating supports the high peak currents of low-voltage, high-torque motors. Designers must use a gate driver with 10 V drive and integrate a 10 nF-100 nF bypass capacitor adjacent to the gate pin to suppress Miller-effect turn-on during hard switching events at 25 kHz PWM frequency.
推荐
E-Bike and Light EV Power Train
The IQE008N03LM5SCATMA1 serves as the main battery disconnect or phase-leg FET in 24 V to 36 V e-bike and light EV power trains. Its 30 V VDS rating fits below 36 V battery systems with adequate transient margin, while the 0.85 mΩ RDS(on) minimizes range loss from conduction. The Source-Down PG-WHSON-8 package's bottom thermal pad allows direct screw-mount to an aluminum chassis for passive cooling in space-constrained e-bike frames. With VGS = 10 V drive, full RDS(on) is achieved; for low-side placement a 1 µs dead-time insertion in the controller is recommended to prevent cross-conduction with the high-side FET.
推荐
Solar Charge Controller MPPT Stage
In MPPT (Maximum Power Point Tracking) charge controllers for off-grid solar systems with 12 V to 24 V battery banks, the IQE008N03LM5SCATMA1 acts as the synchronous rectifier on the secondary side of the isolated or non-isolated DC-DC converter. The 30 V VDS comfortably handles the rectified 24 V solar panel voltage plus transient ringing, and the 0.85 mΩ RDS(on) reduces rectification loss during peak MPPT operation, where every percentage point of efficiency extends daily energy harvest. The Source-Down package mounts directly to the controller's aluminum baseplate for convection cooling in sealed outdoor enclosures.
推荐
推荐产品汇总
工程参考数据： IQE008N03LM5SCATMA1 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | IQE012N03LM5CGSCATMA1 | IQEH50NE2LM7UCGSCATMA1 | IQE036N08NM6CGSCATMA1 |
|---|---|---|---|---|
| Package | PG-WHSON-8 (Source-Down) | PG-WHSON-8 (Source-Down) - same | PG-WHSON-8 (Source-Down) - same | PG-WHSON-8 (Source-Down) - same |
| Brand | Infineon | Infineon | Infineon | Infineon |
| Drain-Source Voltage (VDS) | 30 V | 30 V | 60 V | 80 V |
| RDS(on) max at VGS=10V | 0.85 mΩ | 1.2 mΩ | 5 mΩ | 3.6 mΩ |
| Process Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS 7 | OptiMOS 6 |
| Mounting / Cooling | Surface Mount, Source-Down dual-side cooling | Surface Mount, Source-Down dual-side cooling | Surface Mount, Source-Down dual-side cooling | Surface Mount, Source-Down dual-side cooling |
| RoHS Compliance | Yes | Yes | Yes | Yes |
关键差异点
- Source-Down PG-WHSON-8 package with dual-side cooling （对比 BSC009NE2LS5IATMA1 (SuperSO8, drain-down))
- Ultra-low 0.85 mΩ RDS(on) at VGS = 10 V （对比 IQE012N03LM5CGSCATMA1 (1.2 mΩ))
- 30 V VDS rating optimized for 12 V and 24 V rail applications （对比 IQEH50NE2LM7UCGSCATMA1 (60 V))
设计说明
Estimated: at continuous drain current of 100 A and RDS(on) = 0.85 mΩ, conduction loss is approximately P = I² × RDS(on) = 100² × 0.00085 = 8.5 W. The Source-Down PG-WHSON-8 package must be soldered to at least 1 square inch (645 mm²) of bottom-side copper pour with 2 oz copper weight to keep the junction temperature rise below 50 °C above ambient. For high-current designs above 150 A, add a top-side copper pour on the drain pads connected through thermal vias (0.3 mm drill, 1.2 mm pitch) to the bottom layer. Without dual-side cooling, expect junction temperature rise of 70-80 °C above ambient at 150 A continuous load.
Place a 10 nF to 100 nF X7R ceramic bypass capacitor within 2 mm of the gate pin to suppress Miller-effect parasitic turn-on during high dv/dt switching events. Use a gate resistor of 4.7 Ω to 10 Ω in series with the gate driver output to limit ringing and overshoot. Route the high-current drain and source traces on the same PCB layer to minimize loop inductance; for synchronous buck topologies, the high-current loop area between the low-side FET, high-side FET, and input capacitor should be kept below 50 mm². The Source-Down package requires the bottom copper pour to be on the source net (typically GND), which is the inverse of conventional DFN layout and must be reflected in the schematic symbol.
Source-Down PG-WHSON-8 pinout differs from conventional DFN MOSFETs: drain connections are on pins 5-8 (top side) and source connections are on pins 2-4 plus the bottom thermal pad. Engineers must update schematic symbols and PCB footprints accordingly - copying a standard SuperSO8 footprint will result in drain-source reversal that destroys the FET at first power-up. Verify the Source-Down pinout against the Infineon mechanical drawing before PCB fabrication. The gate is on pin 1 and must be routed away from the drain switching node to avoid capacitive coupling.
Do not drive the gate below the datasheet VGS(th) minimum of 1.0 V or above the absolute maximum of ±20 V; a 12 V Zener clamp across gate-source is recommended for protection against transient overvoltage. Avoid operating continuously at the absolute maximum 252 A ID rating - design for 60-70% of this value (150-180 A) to maintain junction temperature below 125 °C at 25 °C ambient. Never use VGS = 4.5 V drive expecting 0.85 mΩ RDS(on) - the on-resistance increases approximately 1.4× at 4.5 V drive. For battery protection applications, add a 10 kΩ gate-source pull-down resistor to keep the FET off during controller sleep modes.
At switching frequencies above 500 kHz, the Source-Down package's reduced source inductance (typically 0.5 nH versus 2 nH for SuperSO8) significantly lowers voltage overshoot on the drain node during turn-off, reducing the need for snubber circuits. Use a gate driver with 1 A peak source and 2 A peak sink current capability for clean switching edges; the Infineon 2ED21844S06JXUMA1 or 1ED3142MC12HXUMA1 are validated companions. For EMI-sensitive applications, add a small RC snubber (10 Ω + 1 nF) across the drain-source to dampen ringing above 50 MHz.
合规信息
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - this is an industrial/consumer grade MOSFET. Lead-free reflow compatible with JEDEC J-STD-020 MSL ratings. Source-Down PG-WHSON-8 is a halogen-free package.
