IQEH50NE2LM7ZCGATMA1 vs IQEH68NE2LM7UCGATMA1 对比
详细并排对比 IQEH50NE2LM7ZCGATMA1 出自 Infineon 和 IQEH68NE2LM7UCGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IQEH50NE2LM7ZCGATMA1 - 25V 422A OptiMOS 7 N-Channel MOSFET | Infineon
IQEH50NE2LM7ZCGATMA1 ✓ 量产中规格对比
| 参数 | IQEH50NE2LM7ZCGATMA1 | IQEH68NE2LM7UCGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.42 | $1.35 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (Vds) Max | 25 V | — |
| Continuous Drain Current (Ta) | 54 A | — |
| Continuous Drain Current (Tc) | 422 A | — |
| Maximum On-Resistance (Rds(on)) | 0.5 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) | 1.7 V | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 150 W | — |
| Maximum Junction Temperature | +175 degrees C | 175 °C |
| 工作温度范围 | -55 degrees C to +175 degrees C | -55 °C to +175 °C (typical for OptiMOS 7) |
| 封装 | PG-TTFN-9-3 | PG-TTFN-9-3 (surface mount) |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | OptiMOS 7 (Trench-Gate) | OptiMOS 7 trench MOSFET |
| RoHS 状态 | Compliant | Compliant (per distributor listing) |
| Qualification | Industrial grade per Infineon datasheet | — |
| Series | — | OptiMOS 7 |
| 晶体管类型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 25 V |
| Continuous Drain Current (ID) @ Ta | — | 47 A |
| Pulsed Drain Current (IDM) @ Tc | — | 338 A |
| Power Dissipation (PD) @ Ta | — | 2.5 W |
| Power Dissipation (PD) @ Tc | — | 130 W |
| Gate Threshold Voltage Type | — | Logic-level (per OptiMOS 7 family) |
| On-Resistance Family | — | RDS(on)10 / RDS(on)45 (10V and 4.5V rated) |
| MSL 等级 | — | [DATA_NEEDED: MSL Level] |
| Packaging | — | Tape & Reel (per ATMA1 suffix) |