IQEH50NE2LM7ZCGATMA1 vs IQEH68NE2LM7UCGATMA1 Comparison
Detailed side-by-side comparison of IQEH50NE2LM7ZCGATMA1 by Infineon and IQEH68NE2LM7UCGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQEH50NE2LM7ZCGATMA1
IQEH50NE2LM7ZCGATMA1 - 25V 422A OptiMOS 7 N-Channel MOSFET | Infineon
IQEH50NE2LM7ZCGATMA1 β ActiveInfineon
IQEH68NE2LM7UCGATMA1
IQEH68NE2LM7UCGATMA1 - 25V OptiMOS 7 N-MOSFET, 338A | Infineon
IQEH68NE2LM7UCGATMA1 β ActiveSpecification Comparison
| Parameter | IQEH50NE2LM7ZCGATMA1 | IQEH68NE2LM7UCGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.42 | $1.35 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (Vds) Max | 25 V | β |
| Continuous Drain Current (Ta) | 54 A | β |
| Continuous Drain Current (Tc) | 422 A | β |
| Maximum On-Resistance (Rds(on)) | 0.5 mOhm | β |
| Gate Threshold Voltage (Vgs(th)) | 1.7 V | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 150 W | β |
| Maximum Junction Temperature | +175 degrees C | 175 Β°C |
| Operating Temperature Range | -55 degrees C to +175 degrees C | -55 Β°C to +175 Β°C (typical for OptiMOS 7) |
| Package | PG-TTFN-9-3 | PG-TTFN-9-3 (surface mount) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 7 (Trench-Gate) | OptiMOS 7 trench MOSFET |
| RoHS Status | Compliant | Compliant (per distributor listing) |
| Qualification | Industrial grade per Infineon datasheet | β |
| Series | β | OptiMOS 7 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 25 V |
| Continuous Drain Current (ID) @ Ta | β | 47 A |
| Pulsed Drain Current (IDM) @ Tc | β | 338 A |
| Power Dissipation (PD) @ Ta | β | 2.5 W |
| Power Dissipation (PD) @ Tc | β | 130 W |
| Gate Threshold Voltage Type | β | Logic-level (per OptiMOS 7 family) |
| On-Resistance Family | β | RDS(on)10 / RDS(on)45 (10V and 4.5V rated) |
| MSL Level | β | [DATA_NEEDED: MSL Level] |
| Packaging | β | Tape & Reel (per ATMA1 suffix) |