IQEH84NE2LM7UCGATMA1 vs IQDH88N06LM5CGSCATMA1 对比

详细并排对比 IQEH84NE2LM7UCGATMA1 出自 Infineon 和 IQDH88N06LM5CGSCATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IQEH84NE2LM7UCGATMA1 IQEH84NE2LM7UCGATMA1 - 25V OptiMOS 7 N-FET, 275A | Infineon

IQEH84NE2LM7UCGATMA1 - 25V OptiMOS 7 N-FET, 275A | Infineon

IQEH84NE2LM7UCGATMA1 ✓ 量产中
Infineon
IQDH88N06LM5CGSCATMA1 IQDH88N06LM5CGSCATMA1 - 60V N-Ch MOSFET 0.86mΩ | Infineon

IQDH88N06LM5CGSCATMA1 - 60V N-Ch MOSFET 0.86mΩ | Infineon

IQDH88N06LM5CGSCATMA1 ✓ 量产中

规格对比

参数 IQEH84NE2LM7UCGATMA1 IQDH88N06LM5CGSCATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.49 $2.31
FET Type N-Channel —
Technology OptiMOS 7 (Trench MOSFET) OptiMOS 5 (trench)
Drain-Source Voltage (VDS) 25 V —
Continuous Drain Current (ID) at Ta 42 A —
Pulsed Drain Current (IDM) at Tc 275 A —
Power Dissipation (PD) at Ta 2.5 W —
Power Dissipation (PD) at Tc 107 W —
RDS(on) @ VGS=10 V [DATA_NEEDED: RDS(on) at 10 V] —
RDS(on) @ VGS=4.5 V [DATA_NEEDED: RDS(on) at 4.5 V] —
工作结温 -55 C to +175 C —
封装 PG-TTFN-9-3 (surface mount, source-down) PG-WHTFN-9-U02 (PQFN 5x6)
安装类型 Surface Mount Surface Mount
引脚数量 [DATA_NEEDED: pin count from datasheet pinout] 9 (with exposed pad)
RoHS 状态 Compliant Compliant
Lead-Free Yes —
Switching Application Hard- and soft-switching —
晶体管类型 — N-Channel MOSFET
Drain-Source Voltage (V(BR)DSS) — 60 V
Continuous Drain Current (Ta=25°C) — 42 A
连续漏极电流(TC=25°C) — 447 A
On-Resistance RDS(on) typical @ VGS=10V — 0.86 mΩ
Power Dissipation (Ta=25°C) — 3 W
功耗(TC=25°C) — 333 W
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical]
Gate Charge Qg typical — [DATA_NEEDED: Qg typical nC]
工作温度范围 — -55°C to +175°C (TJ)
Cooling — Dual-side cooling capable
MSL 等级 — 1 (per JEDEC J-STD-020)
Polarity — N-Channel
Configuration — Single

数据手册与资源

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