IQEH84NE2LM7UCGATMA1 vs IQEH54NE2LM7UCGATMA1 对比

详细并排对比 IQEH84NE2LM7UCGATMA1 出自 Infineon 和 IQEH54NE2LM7UCGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IQEH84NE2LM7UCGATMA1 IQEH84NE2LM7UCGATMA1 - 25V OptiMOS 7 N-FET, 275A | Infineon

IQEH84NE2LM7UCGATMA1 - 25V OptiMOS 7 N-FET, 275A | Infineon

IQEH84NE2LM7UCGATMA1 ✓ 量产中
Infineon
IQEH54NE2LM7UCGATMA1 IQEH54NE2LM7UCGATMA1 - 25V OptiMOS 7 N-Channel MOSFET | Infineon

IQEH54NE2LM7UCGATMA1 - 25V OptiMOS 7 N-Channel MOSFET | Infineon

IQEH54NE2LM7UCGATMA1 ✓ 量产中

规格对比

参数 IQEH84NE2LM7UCGATMA1 IQEH54NE2LM7UCGATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.49 $1.95
FET Type N-Channel —
Technology OptiMOS 7 (Trench MOSFET) —
Drain-Source Voltage (VDS) 25 V 25 V
Continuous Drain Current (ID) at Ta 42 A 52 A
Pulsed Drain Current (IDM) at Tc 275 A —
Power Dissipation (PD) at Ta 2.5 W —
Power Dissipation (PD) at Tc 107 W —
RDS(on) @ VGS=10 V [DATA_NEEDED: RDS(on) at 10 V] —
RDS(on) @ VGS=4.5 V [DATA_NEEDED: RDS(on) at 4.5 V] —
工作结温 -55 C to +175 C —
封装 PG-TTFN-9-3 (surface mount, source-down) PG-TTFN-9-3
安装类型 Surface Mount Surface Mount
引脚数量 [DATA_NEEDED: pin count from datasheet pinout] —
RoHS 状态 Compliant Compliant
Lead-Free Yes —
Switching Application Hard- and soft-switching —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 7 Power-Transistor
Channel Type — N-Channel
Continuous Drain Current (ID) at Tc — 406 A
Power Dissipation at Ta — 2.5 W
Power Dissipation at Tc — 150 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
On-Resistance (RDS(on)) at 10V VGS — [DATA_NEEDED: RDS(on) max in mohm at VGS=10V]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical in nC]
工作温度范围 — -55C to +150C (typical MOSFET range)
MSL 等级 — [DATA_NEEDED: MSL rating]

数据手册与资源

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