IQEH84NE2LM7UCGATMA1 vs IQEH54NE2LM7UCGATMA1 Comparison
Detailed side-by-side comparison of IQEH84NE2LM7UCGATMA1 by Infineon and IQEH54NE2LM7UCGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQEH84NE2LM7UCGATMA1
IQEH84NE2LM7UCGATMA1 - 25V OptiMOS 7 N-FET, 275A | Infineon
IQEH84NE2LM7UCGATMA1 β ActiveInfineon
IQEH54NE2LM7UCGATMA1
IQEH54NE2LM7UCGATMA1 - 25V OptiMOS 7 N-Channel MOSFET | Infineon
IQEH54NE2LM7UCGATMA1 β ActiveSpecification Comparison
| Parameter | IQEH84NE2LM7UCGATMA1 | IQEH54NE2LM7UCGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.49 | $1.95 |
| FET Type | N-Channel | β |
| Technology | OptiMOS 7 (Trench MOSFET) | β |
| Drain-Source Voltage (VDS) | 25 V | 25 V |
| Continuous Drain Current (ID) at Ta | 42 A | 52 A |
| Pulsed Drain Current (IDM) at Tc | 275 A | β |
| Power Dissipation (PD) at Ta | 2.5 W | β |
| Power Dissipation (PD) at Tc | 107 W | β |
| RDS(on) @ VGS=10 V | [DATA_NEEDED: RDS(on) at 10 V] | β |
| RDS(on) @ VGS=4.5 V | [DATA_NEEDED: RDS(on) at 4.5 V] | β |
| Operating Junction Temperature | -55 C to +175 C | β |
| Package | PG-TTFN-9-3 (surface mount, source-down) | PG-TTFN-9-3 |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | [DATA_NEEDED: pin count from datasheet pinout] | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Switching Application | Hard- and soft-switching | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 7 Power-Transistor |
| Channel Type | β | N-Channel |
| Continuous Drain Current (ID) at Tc | β | 406 A |
| Power Dissipation at Ta | β | 2.5 W |
| Power Dissipation at Tc | β | 150 W |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical/min/max] |
| On-Resistance (RDS(on)) at 10V VGS | β | [DATA_NEEDED: RDS(on) max in mohm at VGS=10V] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typical in nC] |
| Operating Temperature Range | β | -55C to +150C (typical MOSFET range) |
| MSL Level | β | [DATA_NEEDED: MSL rating] |