IQEH84NE2LM7UCGATMA1 vs IQEH68NE2LM7UCGATMA1 对比

详细并排对比 IQEH84NE2LM7UCGATMA1 出自 Infineon 和 IQEH68NE2LM7UCGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IQEH84NE2LM7UCGATMA1 IQEH84NE2LM7UCGATMA1 - 25V OptiMOS 7 N-FET, 275A | Infineon

IQEH84NE2LM7UCGATMA1 - 25V OptiMOS 7 N-FET, 275A | Infineon

IQEH84NE2LM7UCGATMA1 ✓ 量产中
Infineon
IQEH68NE2LM7UCGATMA1 IQEH68NE2LM7UCGATMA1 - 25V OptiMOS 7 N-MOSFET, 338A | Infineon

IQEH68NE2LM7UCGATMA1 - 25V OptiMOS 7 N-MOSFET, 338A | Infineon

IQEH68NE2LM7UCGATMA1 ✓ 量产中

规格对比

参数 IQEH84NE2LM7UCGATMA1 IQEH68NE2LM7UCGATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.49 $1.35
FET Type N-Channel —
Technology OptiMOS 7 (Trench MOSFET) OptiMOS 7 trench MOSFET
Drain-Source Voltage (VDS) 25 V 25 V
Continuous Drain Current (ID) at Ta 42 A —
Pulsed Drain Current (IDM) at Tc 275 A —
Power Dissipation (PD) at Ta 2.5 W —
Power Dissipation (PD) at Tc 107 W —
RDS(on) @ VGS=10 V [DATA_NEEDED: RDS(on) at 10 V] —
RDS(on) @ VGS=4.5 V [DATA_NEEDED: RDS(on) at 4.5 V] —
工作结温 -55 C to +175 C —
封装 PG-TTFN-9-3 (surface mount, source-down) PG-TTFN-9-3 (surface mount)
安装类型 Surface Mount Surface Mount
引脚数量 [DATA_NEEDED: pin count from datasheet pinout] —
RoHS 状态 Compliant Compliant (per distributor listing)
Lead-Free Yes —
Switching Application Hard- and soft-switching —
Manufacturer — Infineon Technologies
Series — OptiMOS 7
晶体管类型 — N-Channel MOSFET
Continuous Drain Current (ID) @ Ta — 47 A
Pulsed Drain Current (IDM) @ Tc — 338 A
Power Dissipation (PD) @ Ta — 2.5 W
Power Dissipation (PD) @ Tc — 130 W
Gate Threshold Voltage Type — Logic-level (per OptiMOS 7 family)
On-Resistance Family — RDS(on)10 / RDS(on)45 (10V and 4.5V rated)
Maximum Junction Temperature — 175 °C
工作温度范围 — -55 °C to +175 °C (typical for OptiMOS 7)
MSL 等级 — [DATA_NEEDED: MSL Level]
Packaging — Tape & Reel (per ATMA1 suffix)

数据手册与资源

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