IR2109STRPBF vs IR2101STRPBF 对比

详细并排对比 IR2109STRPBF 出自 Infineon 和 IR2101STRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IR2109STRPBF IR2109STRPBF - 600V Half-Bridge Gate Driver IC | Infineon

IR2109STRPBF - 600V Half-Bridge Gate Driver IC | Infineon

IR2109STRPBF ✓ 量产中

规格对比

参数 IR2109STRPBF IR2101STRPBF
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.61 $0.68
Product Type Half-Bridge Gate Driver IC —
Configuration Half-Bridge (High-Side + Low-Side) Half-Bridge (High-Side and Low-Side), Independent
输出数量 2 (High-Side / Low-Side) —
High-Side Offset Voltage (Max) 600 V —
Supply Voltage (VCC) 10 V to 20 V —
Peak Source Output Current 0.2 A (typ) —
Peak Sink Output Current 0.35 A (typ) —
Propagation Delay (typ) 750 ns —
Rise/Fall Time (typ) [DATA_NEEDED: rise/fall time] —
ton / toff (typ) 540 ns —
Input Logic Non-Inverting —
UVLO Yes (VCC and VBS) —
Bootstrap Diode Integrated Integrated
Dead Time Control Built-in —
dV/dt Immunity Yes —
Negative VS Transient Tolerance Yes —
封装 8-SOIC (3.90 mm Width) 8-SOIC (0.154 inch, 3.90 mm Width)
安装类型 Surface Mount Surface Mount
工作温度 -40 C to +125 C -40 C to +125 C
RoHS 状态 Compliant Compliant
Number of Drivers — 2
Driver Type — Non-Inverting
Maximum Offset Voltage — 600 V
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Source Current (Typ.) — 210 mA
Sink Current (Typ.) — 360 mA
Propagation Delay (Typ.) — 160 ns
Rise Time (Typ.) — [DATA_NEEDED: rise time]
Fall Time (Typ.) — [DATA_NEEDED: fall time]
Logic Input Compatibility — 3.3 V / 5 V / 15 V CMOS/LSTTL
Undervoltage Lockout (UVLO) — Yes (VCC and VBS)
Negative Transient Immunity on VS — Yes (dV/dt immune)
MSL 等级 — MSL 3

数据手册与资源

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