IR2110SPBF vs IRS2110STRPBF 对比

详细并排对比 IR2110SPBF 出自 Infineon 和 IRS2110STRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRS2110STRPBF IRS2110STRPBF - 500V High/Low-Side Gate Driver | Infineon

IRS2110STRPBF - 500V High/Low-Side Gate Driver | Infineon

IRS2110STRPBF ✓ 量产中

规格对比

参数 IR2110SPBF IRS2110STRPBF
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.98 $1.42
功能 Half-bridge gate driver —
拓扑 High-side and low-side referenced output channels —
Number of Channels 2 (1 high-side, 1 low-side) —
Logic Type Non-inverting —
Maximum Offset Voltage (Voffset) 500 V —
Gate Drive Supply Voltage (Vcc/VCC) 10 V to 20 V —
Peak Output Current (source/sink) 2.0 A / 2.0 A —
Typical Propagation Delay (ton/toff) 94 ns / 94 ns —
Rise/Fall Time (typical) 25 ns / 17 ns —
Logic Input Compatibility 3.3 V CMOS / LSTTL CMOS/TTL compatible (3.3 V logic compatible)
Bootstrap Diode Integrated Integrated
Undervoltage Lockout (UVLO) Yes, both Vcc and VCC —
工作温度范围 -40 C to +125 C —
封装 16-pin SOIC (SO-16, DW suffix) 16-pin SOIC Wide-Body (SOIC-WB), Tape and Reel
安装类型 Surface Mount Surface Mount
Technology HVIC + latch-immune CMOS —
Lead-Free / RoHS Yes / Compliant (Pb-free PBF suffix) Lead-Free, RoHS Compliant
Driver Configuration — Half-Bridge
Number of Drivers — 2 (High-Side and Low-Side)
输出数量 — 2
输出类型 — Non-Inverting
Maximum Offset Voltage — 500 V
Gate Drive Supply (VCC) — 10 V to 20 V
Source/Sink Output Current (typ.) — 2.5 A / 2.5 A
Propagation Delay ton/toff (typ.) — 30 ns / 30 ns
Rise/Fall Time (typ.) — 17 ns / 25 ns
Shutdown Input — Active-low, forces both outputs low
Undervoltage Lockout — Yes (VCC and VBS)
工作温度 — -40 C to +150 C
MSL 等级 — 3 (168 hours)

数据手册与资源

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