IRF150P220AKMA1 vs IRFB4110PBF 对比

详细并排对比 IRF150P220AKMA1 出自 Infineon 和 IRFB4110PBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRF150P220AKMA1 IRFB4110PBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $3.55 $1.55
Manufacturer Infineon Technologies —
Part Number IRF150P220AKMA1 —
Technology StrongIRFET HEXFET (planar DMOS)
晶体管类型 N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS max) 150 V —
Continuous Drain Current (ID) at Tc=25C 203 A —
On-Resistance (RDS(on) max) at VGS=10V 2.7 mOhm —
Gate-Source Voltage (VGS max) [DATA_NEEDED: VGS max] —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typ] —
Power Dissipation (Pd) at Tc=25C 556 W —
Power Dissipation (Pd) at Ta=25C 3.8 W —
工作温度范围 -55C to +175C —
封装 TO-247-3 (PG-TO247-3) TO-220AB (through-hole)
安装类型 Through Hole Through Hole
Terminal Finish Tin (Sn) —
JESD-609 Code e3 —
RoHS 状态 Compliant Compliant (Pb-free suffix)
Lead-Free Yes Yes (PBF suffix denotes Pb-free)
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TC=25°C — 120 A (bond-wire limited)
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
On-Resistance RDS(on) max at VGS=10V — 4.5 mΩ
On-Resistance RDS(on) typ at VGS=10V — 3.7 mΩ
Power Dissipation (PD) at TC=25°C — 370 W
工作结温 — -55 °C to +175 °C

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