IRF150P220AKMA1 vs IRFB4110PBF Comparison

Detailed side-by-side comparison of IRF150P220AKMA1 by Infineon and IRFB4110PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF150P220AKMA1 IRFB4110PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $3.55 $1.55
Manufacturer Infineon Technologies β€”
Part Number IRF150P220AKMA1 β€”
Technology StrongIRFET HEXFET (planar DMOS)
Transistor Type N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS max) 150 V β€”
Continuous Drain Current (ID) at Tc=25C 203 A β€”
On-Resistance (RDS(on) max) at VGS=10V 2.7 mOhm β€”
Gate-Source Voltage (VGS max) [DATA_NEEDED: VGS max] β€”
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typ] β€”
Power Dissipation (Pd) at Tc=25C 556 W β€”
Power Dissipation (Pd) at Ta=25C 3.8 W β€”
Operating Temperature Range -55C to +175C β€”
Package TO-247-3 (PG-TO247-3) TO-220AB (through-hole)
Mounting Type Through Hole Through Hole
Terminal Finish Tin (Sn) β€”
JESD-609 Code e3 β€”
RoHS Status Compliant Compliant (Pb-free suffix)
Lead-Free Yes Yes (PBF suffix denotes Pb-free)
Drain-Source Voltage (VDS) β€” 100 V
Continuous Drain Current (ID) at TC=25Β°C β€” 120 A (bond-wire limited)
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max β€” Β±20 V
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical/min/max]
On-Resistance RDS(on) max at VGS=10V β€” 4.5 mΞ©
On-Resistance RDS(on) typ at VGS=10V β€” 3.7 mΞ©
Power Dissipation (PD) at TC=25Β°C β€” 370 W
Operating Junction Temperature β€” -55 Β°C to +175 Β°C

Datasheets & Resources

Browse All Products Create BOM Request Quote