IRF2907ZSTRLPBF vs IRFB4110PBF 对比

详细并排对比 IRF2907ZSTRLPBF 出自 Infineon 和 IRFB4110PBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRF2907ZSTRLPBF IRFB4110PBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.55 $1.55
Transistor Polarity N-Channel —
Drain-Source Voltage V(BR)DSS 75 V —
连续漏极电流(TC=25°C) 170 A —
连续漏极电流(TC=100°C) [DATA_NEEDED: ID at TC=100C] —
RDS(on) max at VGS = 10 V 4.5 mOhm —
RDS(on) typical at VGS = 10 V 3.5 mOhm —
Gate Threshold Voltage VGS(th) 2.0 V to 4.0 V —
Maximum Power Dissipation (TC = 25 C) 300 W —
工作结温 -55 C to +175 C -55 °C to +175 °C
Technology IR HEXFET / IR MOSFET HEXFET (planar DMOS)
封装 D2PAK (TO-263AB) surface mount TO-220AB (through-hole)
引脚数量 3 (Gate, Drain, Source) —
安装类型 Surface Mount (SMD) Through Hole
Packaging Tape and Reel (left orientation) —
Lead-Free Yes (PBF suffix) Yes (PBF suffix denotes Pb-free)
RoHS 状态 Compliant Compliant (Pb-free suffix)
Avalanche Rating Repetitive avalanche allowed up to TJ(max) —
晶体管类型 — N-Channel MOSFET
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TC=25°C — 120 A (bond-wire limited)
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
On-Resistance RDS(on) max at VGS=10V — 4.5 mΩ
On-Resistance RDS(on) typ at VGS=10V — 3.7 mΩ
Power Dissipation (PD) at TC=25°C — 370 W

数据手册与资源

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