IRF2907ZSTRLPBF vs IRFB4110PBF Comparison
Detailed side-by-side comparison of IRF2907ZSTRLPBF by Infineon and IRFB4110PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF2907ZSTRLPBF | IRFB4110PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.55 | $1.55 |
| Transistor Polarity | N-Channel | β |
| Drain-Source Voltage V(BR)DSS | 75 V | β |
| Continuous Drain Current (TC = 25 C) | 170 A | β |
| Continuous Drain Current (TC = 100 C) | [DATA_NEEDED: ID at TC=100C] | β |
| RDS(on) max at VGS = 10 V | 4.5 mOhm | β |
| RDS(on) typical at VGS = 10 V | 3.5 mOhm | β |
| Gate Threshold Voltage VGS(th) | 2.0 V to 4.0 V | β |
| Maximum Power Dissipation (TC = 25 C) | 300 W | β |
| Operating Junction Temperature | -55 C to +175 C | -55 Β°C to +175 Β°C |
| Technology | IR HEXFET / IR MOSFET | HEXFET (planar DMOS) |
| Package | D2PAK (TO-263AB) surface mount | TO-220AB (through-hole) |
| Pin Count | 3 (Gate, Drain, Source) | β |
| Mounting Type | Surface Mount (SMD) | Through Hole |
| Packaging | Tape and Reel (left orientation) | β |
| Lead-Free | Yes (PBF suffix) | Yes (PBF suffix denotes Pb-free) |
| RoHS Status | Compliant | Compliant (Pb-free suffix) |
| Avalanche Rating | Repetitive avalanche allowed up to TJ(max) | β |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) at TC=25Β°C | β | 120 A (bond-wire limited) |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical/min/max] |
| On-Resistance RDS(on) max at VGS=10V | β | 4.5 mΞ© |
| On-Resistance RDS(on) typ at VGS=10V | β | 3.7 mΞ© |
| Power Dissipation (PD) at TC=25Β°C | β | 370 W |