IRF2907ZSTRLPBF vs IRFB4110PBF Comparación
Comparación detallada lado a lado de IRF2907ZSTRLPBF por Infineon y IRFB4110PBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRF2907ZSTRLPBF | IRFB4110PBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,55 | $1,55 |
| Transistor Polarity | N-Channel | — |
| Drain-Source Voltage V(BR)DSS | 75 V | — |
| Corriente de drenador continua (TC=25°C) | 170 A | — |
| Corriente de drenador continua (TC=100°C) | [DATA_NEEDED: ID at TC=100C] | — |
| RDS(on) max at VGS = 10 V | 4.5 mOhm | — |
| RDS(on) typical at VGS = 10 V | 3.5 mOhm | — |
| Gate Threshold Voltage VGS(th) | 2.0 V to 4.0 V | — |
| Maximum Power Dissipation (TC = 25 C) | 300 W | — |
| Temperatura de unión de funcionamiento | -55 C to +175 C | -55 °C to +175 °C |
| Technology | IR HEXFET / IR MOSFET | HEXFET (planar DMOS) |
| Encapsulado | D2PAK (TO-263AB) surface mount | TO-220AB (through-hole) |
| Recuento de pines | 3 (Gate, Drain, Source) | — |
| Tipo de montaje | Surface Mount (SMD) | Through Hole |
| Packaging | Tape and Reel (left orientation) | — |
| Lead-Free | Yes (PBF suffix) | Yes (PBF suffix denotes Pb-free) |
| Estado RoHS | Compliant | Compliant (Pb-free suffix) |
| Avalanche Rating | Repetitive avalanche allowed up to TJ(max) | — |
| Tipo de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25°C | — | 120 A (bond-wire limited) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| On-Resistance RDS(on) max at VGS=10V | — | 4.5 mΩ |
| On-Resistance RDS(on) typ at VGS=10V | — | 3.7 mΩ |
| Power Dissipation (PD) at TC=25°C | — | 370 W |