IRF530NSTRLPBF vs IRF520NPBF 对比
详细并排对比 IRF530NSTRLPBF 出自 Infineon 和 IRF520NPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRF530NSTRLPBF | IRF520NPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.89 | $0.66 |
| Polarity | N-Channel | — |
| MOSFET Operating Mode | Enhancement | — |
| Drain-Source Breakdown Voltage (V(BR)DSS) | 100 V | — |
| Continuous Drain Current (ID) at Tc=25C | 17 A | — |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | 90 mOhm | — |
| Total Gate Charge (Qg) | 24.7 nC | — |
| Power Dissipation (Pd) at Tc=25C | 70 W | — |
| Power Dissipation (Pd) at Ta=25C | 3.8 W | — |
| Gate-Source Voltage (VGS) max | +/- 20 V | — |
| Package Type | D2PAK (TO-263), 3-pin (2 + tab) | — |
| 安装类型 | Surface Mount | Through Hole |
| Technology | HEXFET (Planar Stripe Cell) | HEXFET (vertical DMOS) |
| 工作温度范围 | -55C to +175C | -55C to +175C |
| Lead-Free / RoHS Status | Lead-Free / RoHS Compliant | — |
| Qualification Market | Industrial | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | HEXFET |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (V_DSS) | — | 100 V |
| Continuous Drain Current (I_D) at Tc | — | 9.7 A |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current value] |
| Gate-to-Source Voltage (V_GS) max | — | ±20 V |
| R_DS(on) max at V_GS=10V | — | 200 mOhm |
| Total Gate Charge (Q_g) | — | 16.7 nC |
| Power Dissipation (P_D) at Tc | — | 48 W |
| 封装 | — | TO-220AB (through-hole) |
| MSL 等级 | — | 1 (unlimited) |
| RoHS 状态 | — | Compliant (Pb-free) |
| Lead-Free Finish | — | Yes (PBF suffix) |