IRF7105PBF vs IRF7351TRPBF 对比

详细并排对比 IRF7105PBF 出自 Infineon 和 IRF7351TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRF7105PBF IRF7351TRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.61 $0.68
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Part Number IRF7105PBF IRF7351TRPBF
FET Type N-Channel and P-Channel (Dual, Complementary) —
Technology HEXFET (Fifth Generation) IR MOSFET (HEXFET trench)
N-Channel VDS (Drain-Source Voltage) 25 V —
P-Channel VDS (Drain-Source Voltage) 25 V —
N-Channel Continuous Drain Current (ID) 3.5 A —
P-Channel Continuous Drain Current (ID) 2.3 A —
Total Package Power Dissipation (PD) 2 W —
封装 / 外壳 8-SOIC (SO-8) —
安装类型 Surface Mount Surface Mount
引脚数量 8 —
Lead-Free / Halogen-Free Yes / Yes —
RoHS Compliance Compliant —
MSL (Moisture Sensitivity Level) MSL1 —
Qualification Industrial —
Soldering Compatibility Vapor Phase, Infrared, Wave —
dv/dt Rating Dynamic (rated per datasheet) —
Configuration — Dual N-Channel MOSFET (Half-Bridge)
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) — 8 A
On-Resistance RDS(on) max — 17.8 mOhm
On-Resistance RDS(on) typ (per digchips) — 0.0137 ohm (13.7 mOhm)
Total Gate Charge (Qg) — 24 nC
Power Dissipation (PD) — 2 W
封装 — 8-SO (SO-8 / SOIC-8) Surface Mount
工作温度 — -55C to +150C (junction)
Typical Application — Synchronous Rectifier for Isolated DC-DC Converters
RoHS 状态 — Compliant (PBF suffix = lead-free)
Lead-Free — Yes
MSL 等级 — [DATA_NEEDED: MSL Level]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min]

数据手册与资源

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