IRF7309TRPBF vs IRF8736TRPBF 对比

详细并排对比 IRF7309TRPBF 出自 Infineon 和 IRF8736TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRF7309TRPBF IRF8736TRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.35 $0.27
Configuration Dual N-Channel + P-Channel (Complementary) Single
Polarity N+P —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (N-channel, TA=25C) 4 A —
Continuous Drain Current (P-channel, TA=25C) 3 A —
On-Resistance (N-channel, max) 50 mOhm —
On-Resistance (P-channel, max) [DATA_NEEDED: RDS(on) P-channel value] —
Power Dissipation (TA=25C) 1.4 W —
Technology IR HEXFET Generation V StrongIRFET / HEXFET
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] —
工作温度范围 -55C to +150C (TJ) -55C to +150C (junction)
封装 8-SO (SOIC-8) SO-8 (8-SO, MS-012AA)
安装类型 Surface Mount Surface Mount
MSL 等级 MSL-1 (unlimited floor life per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Lead-Free Status Yes (TRPBF suffix = Pb-free) —
RoHS 状态 Compliant —
Packaging Tape & Reel Tape & Reel (TRPBF suffix)
FET Type — N-Channel
Drain-Source Voltage (VDS) Max — 30 V
Continuous Drain Current (ID) at TA=25C — 18 A
Power Dissipation (PD) Max at TA=25C — 2.5 W
Drain-Source On-Resistance (RDS(on)) Max — 4.8 mOhm at VGS = 10V
Gate Charge (Qg) Typical — 17 nC
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Lead-Free / RoHS — Yes (PBF suffix = lead-free, RoHS compliant)
Avalanche Rated — Yes (fully characterized avalanche voltage)

数据手册与资源

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