IRF7309TRPBF vs IRF8736TRPBF Vergleich
Detaillierter Direktvergleich von IRF7309TRPBF von Infineon und IRF8736TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRF7309TRPBF | IRF8736TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,35 | $0,27 |
| Configuration | Dual N-Channel + P-Channel (Complementary) | Single |
| Polarity | N+P | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (N-channel, TA=25C) | 4 A | — |
| Continuous Drain Current (P-channel, TA=25C) | 3 A | — |
| On-Resistance (N-channel, max) | 50 mOhm | — |
| On-Resistance (P-channel, max) | [DATA_NEEDED: RDS(on) P-channel value] | — |
| Power Dissipation (TA=25C) | 1.4 W | — |
| Technology | IR HEXFET Generation V | StrongIRFET / HEXFET |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | — |
| Betriebstemperaturbereich | -55C to +150C (TJ) | -55C to +150C (junction) |
| Gehäuse | 8-SO (SOIC-8) | SO-8 (8-SO, MS-012AA) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | MSL-1 (unlimited floor life per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Lead-Free Status | Yes (TRPBF suffix = Pb-free) | — |
| RoHS-Status | Compliant | — |
| Packaging | Tape & Reel | Tape & Reel (TRPBF suffix) |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 18 A |
| Power Dissipation (PD) Max at TA=25C | — | 2.5 W |
| Drain-Source On-Resistance (RDS(on)) Max | — | 4.8 mOhm at VGS = 10V |
| Gate Charge (Qg) Typical | — | 17 nC |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free, RoHS compliant) |
| Avalanche Rated | — | Yes (fully characterized avalanche voltage) |