IRF7319TRPBF vs IRF7389TRPBF 对比
详细并排对比 IRF7319TRPBF 出自 Infineon 和 IRF7389TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRF7319TRPBF | IRF7389TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.62 | $0.58 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon (formerly International Rectifier) |
| Product Type | Dual MOSFET Array (N-channel + P-channel) | — |
| Technology | IR MOSFET / Fifth Generation HEXFET | HEXFET Generation V (IR MOSFET) |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current N-channel (ID) | 6.5 A | — |
| Continuous Drain Current P-channel (ID) | 4.9 A | — |
| RDS(on) Max N-channel | 29 mOhm (per Infineon product page) | — |
| RDS(on) Max P-channel | [DATA_NEEDED: P-channel RDS(on) max] | — |
| Total Power Dissipation (PD) | 2 W | — |
| Thermal Resistance Junction-to-Ambient N-ch | 120 C/W (steady state) | — |
| Thermal Resistance Junction-to-Ambient P-ch | 110 C/W (steady state) | — |
| Package Type | 8-SOIC (SO-8) | — |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55C to +150C (junction) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Lead-Free / RoHS | Yes (PBF suffix = Pb-free) | — |
| Packaging | Tape & Reel (TR suffix) | — |
| Configuration | N-Channel + P-Channel (complementary half-bridge) | Dual N+P Complementary Half-Bridge |
| Transistor Polarity | — | N and P Channel |
| Drain-Source Voltage (Vds) | — | 30 V |
| Continuous Drain Current (N-Ch, Id) | — | 7.3 A |
| Continuous Drain Current (P-Ch, Id) | — | -5.3 A |
| On-Resistance RDS(on) Max | — | 29 mOhm |
| Power Dissipation (Pd) | — | 2.5 W |
| 封装 | — | 8-SO (SOIC-8) |
| 工作温度 | — | -55C to +150C |
| Avalanche Rated | — | Yes |
| Lead Free / RoHS | — | Lead Free / RoHS Compliant |
| MSL 等级 | — | 1 |