IRF7341GTRPBF vs ISA150233C03LMDSXTMA1 对比
详细并排对比 IRF7341GTRPBF 出自 Infineon 和 ISA150233C03LMDSXTMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
ISA150233C03LMDSXTMA1 - 30V OptiMOS 3 Dual N+P MOSFET | Infineon
ISA150233C03LMDSXTMA1 ✓ 量产中规格对比
| 参数 | IRF7341GTRPBF | ISA150233C03LMDSXTMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.76 | $0.61 |
| Drain-Source Voltage (VDS) | 55 V | 30 V |
| Continuous Drain Current (ID) | 5.1 A | — |
| On-Resistance (RDS(on)) max | 50 mOhm at VGS=10V | — |
| Power Dissipation (PD) | 2.4 W | — |
| Maximum Junction Temperature | 175 C | — |
| Configuration | Dual N-Channel | Dual N-channel + P-channel (1 N + 1 P) |
| Technology | IR HEXFET Planar MOSFET | OptiMOS 3 trench MOSFET |
| 封装 | 8-SO (SOIC-8) | PG-DSO-8-920 (SO-8 with thermal pad) |
| 安装类型 | Surface Mount | Surface Mount |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typical] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| 工作温度范围 | -55 C to +175 C | -55 C to +150 C (junction) |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes (PBF suffix) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 3 |
| N-channel Continuous Drain Current (Ta) | — | 7.6 A |
| N-channel Continuous Drain Current (Tc) | — | 10.2 A |
| P-channel Continuous Drain Current (Ta) | — | 6.6 A |
| P-channel Continuous Drain Current (Tc) | — | 8.8 A |
| Total Power Dissipation (Ta) | — | 1.4 W |
| Total Power Dissipation (Tc) | — | 2.5 W |
| Marking Code | — | 1523C03L |
| Channel Type | — | N-channel + P-channel enhancement mode |