IRF7342TRPBF vs IRF7907TRPBF 对比
详细并排对比 IRF7342TRPBF 出自 Infineon 和 IRF7907TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRF7342TRPBF | IRF7907TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.48 | $0.43 |
| Part Number | IRF7342TRPBF | — |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Technology | HEXFET Power MOSFET (Fifth Generation), P-Channel | IR MOSFET (Infineon hexfet-style trench) |
| Configuration | Dual P-Channel MOSFET Array (two independent P-FETs in one package) | Dual N-Channel MOSFET Array |
| Drain-Source Voltage (Vds) | -55 V | — |
| Continuous Drain Current (Id) | -3.4 A at 25 C | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | — |
| Gate Threshold Voltage (Vgs(th)) | -1.0 V to -3.0 V (typ -1.7 V) | — |
| Drain-Source On-Resistance (RDS(on)) | 0.105 ohm max at VGS = -10 V | — |
| Maximum Power Dissumption (Pd) | 2 W | — |
| 工作温度范围 | -55 C to +150 C (Tj) | -55 C to +150 C |
| 封装 | 8-SOIC (SO-8), surface mount | 8-SOIC (SO-8) |
| 安装类型 | Surface Mount | Surface Mount |
| Packaging | Tape and Reel (TR) | Tape & Reel (TR) |
| Lead-Free / RoHS | Yes (PBF suffix indicates lead-free, RoHS compliant) | — |
| Channel Type | P-Channel (enhancement mode) | — |
| Number of Channels | 2 (dual array) | — |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) Max | — | 9.1 A per channel at 25 C |
| Pulsed Drain Current (IDM) Max | — | 11 A |
| On-Resistance (RDS(on)) Max | — | 11.8 mOhm at VGS = 10 V |
| Gate-Source Threshold Voltage (VGS(th)) | — | 1.35 V (typ) |
| Total Power Dissipation (PD) Max | — | 2 W |
| Lead-Free Status | — | Yes (PBF suffix) |
| RoHS 状态 | — | Compliant |
| Channel Polarity | — | N-Channel (both) |