IRF7351TRPBF vs IRF7105TRPBF 对比

详细并排对比 IRF7351TRPBF 出自 Infineon 和 IRF7105TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRF7351TRPBF IRF7105TRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.68 $0.30
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Part Number IRF7351TRPBF —
Configuration Dual N-Channel MOSFET (Half-Bridge) —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) 8 A —
On-Resistance RDS(on) max 17.8 mOhm —
On-Resistance RDS(on) typ (per digchips) 0.0137 ohm (13.7 mOhm) —
Total Gate Charge (Qg) 24 nC —
Power Dissipation (PD) 2 W —
Technology IR MOSFET (HEXFET trench) HEXFET (IR MOSFET, fifth generation)
封装 8-SO (SO-8 / SOIC-8) Surface Mount 8-SO (SOIC-8)
安装类型 Surface Mount Surface Mount
工作温度 -55C to +150C (junction) —
Typical Application Synchronous Rectifier for Isolated DC-DC Converters —
RoHS 状态 Compliant (PBF suffix = lead-free) —
Lead-Free Yes —
MSL 等级 [DATA_NEEDED: MSL Level] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min] —
Part Series — IRF7105 (HEXFET Fifth Generation)
Polarity / Configuration — N-Channel + P-Channel, dual MOSFET in one package
Drain-to-Source Voltage (Vds) — 25 V
Continuous Drain Current - N-channel (Id, N-ch) — 3.5 A
Continuous Drain Current - P-channel (Id, P-ch) — 2.3 A
Rds(on) Maximum — 100 mOhm
Total Package Power Dissipation (Pd) — 2 W
工作温度范围 — [DATA_NEEDED: junction temperature range]
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: typical Vgs(th)]
Packaging Form — Tape & Reel (TR)
Lead-Free / RoHS Status — Pb-free (PBF suffix), RoHS compliant
引脚数量 — 8

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