IRF7351TRPBF vs IRF7105TRPBF 비교

다음의 상세 나란히 비교: IRF7351TRPBF 제조: Infineon 및 IRF7105TRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRF7351TRPBF IRF7105TRPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.68 $0.30
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Part Number IRF7351TRPBF —
Configuration Dual N-Channel MOSFET (Half-Bridge) —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) 8 A —
On-Resistance RDS(on) max 17.8 mOhm —
On-Resistance RDS(on) typ (per digchips) 0.0137 ohm (13.7 mOhm) —
Total Gate Charge (Qg) 24 nC —
Power Dissipation (PD) 2 W —
Technology IR MOSFET (HEXFET trench) HEXFET (IR MOSFET, fifth generation)
패키지 8-SO (SO-8 / SOIC-8) Surface Mount 8-SO (SOIC-8)
실장 유형 Surface Mount Surface Mount
동작 온도 -55C to +150C (junction) —
Typical Application Synchronous Rectifier for Isolated DC-DC Converters —
RoHS 상태 Compliant (PBF suffix = lead-free) —
Lead-Free Yes —
MSL 레벨 [DATA_NEEDED: MSL Level] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min] —
Part Series — IRF7105 (HEXFET Fifth Generation)
Polarity / Configuration — N-Channel + P-Channel, dual MOSFET in one package
Drain-to-Source Voltage (Vds) — 25 V
Continuous Drain Current - N-channel (Id, N-ch) — 3.5 A
Continuous Drain Current - P-channel (Id, P-ch) — 2.3 A
Rds(on) Maximum — 100 mOhm
Total Package Power Dissipation (Pd) — 2 W
동작 온도 범위 — [DATA_NEEDED: junction temperature range]
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: typical Vgs(th)]
Packaging Form — Tape & Reel (TR)
Lead-Free / RoHS Status — Pb-free (PBF suffix), RoHS compliant
핀 수 — 8

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